Microscopic analysis of the degradation mechanism of gallium arsenide metal-semiconductor field-effect transistor

被引：4
|
作者：
Sasaki, H
Hayashi, K
Fujioka, T
Mizuguchi, K
Yea, B
Osaki, T
Sugahara, K
Konishi, R
机构：
[1] Mitsubishi Elect Corp, Semicond Grp, Itami, Hyogo 664, Japan
[2] Tottori Univ, Fac Engn, Tottori 680, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1998年 / 37卷 / 08期
关键词：
GaAs MESFET; surface states; degradation; reliability; hot carrier; impact ionization; thermionic field emission; drain current transient; Raman scattering; X-TEM; OBIC; light emission; electroluminescence;
D O I：
10.1143/JJAP.37.4301
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The microscopic degradation mechanism of the recess surface of GaAs metal- semiconductor field-effect transistor (MESFET) after a long duration aging is analyzed using a transmission electron microscope (TEM), Raman scattering and several other analytical methods. Crystallographic arsenic (As) and amorphous gallium (Ga) precipitated after the aging test. Raman scattering during device operation indicates that the temperature of the drain side is higher than that of the source side. Light emission by hot carriers is observed at the drain side of the device during operation. The degradation of the device is accelerated by the hut carriers generated by a thermionic field emission at the high-temperature drain side.
引用
收藏
页码：4301 / 4305
页数：5
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