Electrical characteristics of metal-ferroelectric-semiconductor structures based on poly(vinylidene fluoride)

被引：7

作者：

Kim, Jeong Hwan ^{[1
]}

Kim, Dong Won ^{[1
]}

Jeon, Ho Seung ^{[1
]}

Park, Yung Eun ^{[1
]}

机构：

[1] Univ Seoul, Dept Elect & Comp Engn, Seoul 130743, South Korea

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2007年 / 46卷 / 10B期

关键词：

PVDF; sol-gel; MFS; FRAM; low voltage; memory;

D O I：

10.1143/JJAP.46.6976

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We prepared poly(vinylidene fluoride) (PVDF) films in the beta phase by a sol-gel method using PVDF solutions with different weight fractions. The electrical properties of PVDF films were studied for the possibility of using them in one-transistor (1-T)type ferroelectric random-access memories (FRAMs). In this research, the Au/PVDF/Si structure made from PVDF solution of 6 wt % concentration showed good ferroelectric and electrical properties. The memory window width and current density for the PVDF film from the 6 wt % PVDF solution were about 1.8 V and 10(-6) A/cm(2) for a bias voltage of 5 V, respectively. It is expected from these good ferroelectric properties that PVDF films will be suitable for low-cost 1-T-type FRAMs operating at a low voltage.

引用

页码：6976 / 6978

页数：3

共 14 条

[1] Hysteresis in ultrathin ferroelectric polymer films observed by capacitance versus voltage measurements [J].

Afifuddin ;

Guy, I .

INTEGRATED FERROELECTRICS, 1997, 14 (1-4) :259-264

[2] Fabrication and characterization of metal-ferroelectric (PbZr0.53Ti0.47O3)-insulator (Dy2O3)-semiconductor capacitors for nonvolatile memory applications - art. no. 072917 [J].

Chang, CY ;

Juan, TPC ;

Lee, JYM .

APPLIED PHYSICS LETTERS, 2006, 88 (07)

[3] Investigation of the current path of Pb(Zr,Ti)O-3 thin films using an atomic force microscope with simultaneous current measurement [J].

Fujisawa, H ;

Shimizu, M ;

Horiuchi, T ;

Shiosaki, T ;

Matsushige, K .

APPLIED PHYSICS LETTERS, 1997, 71 (03) :416-418

[4] FERROELECTRIC PROPERTIES OF VINYLIDENE FLUORIDE COPOLYMERS [J].

FURUKAWA, T .

PHASE TRANSITIONS, 1989, 18 (3-4) :143-211

[5] Phase transition and properties of a ferroelectric poly(vinylidene fluoride-hexafluoropropylene) copolymer [J].

He, XJ ;

Yao, K ;

Gan, BK .

JOURNAL OF APPLIED PHYSICS, 2005, 97 (08)

[6] Current status and challenges of ferroelectric memory devices [J].

Kohlstedt, H ;

Mustafa, Y ;

Gerber, A ;

Petraru, A ;

Fitsilis, M ;

Meyer, R ;

Böttger, U ;

Waser, R .

MICROELECTRONIC ENGINEERING, 2005, 80 :296-304

[7] Electrical properties of metal-ferroelectric-insulator-semiconductor structures based on ferroelectric polyvinylidene fluoride copolymer film gate for nonvolatile random access memory application [J].

Lim, SH ;

Rastogi, AC ;

Desu, SB .

JOURNAL OF APPLIED PHYSICS, 2004, 96 (10) :5673-5682

[8] Origin of the drain current bistability in polymer ferroelectric field-effect transistors [J].

Naber, R. C. G. ;

Massolt, J. ;

Spijkman, M. ;

Asadi, K. ;

Blom, P. W. M. ;

de Leeuw, D. M. .

APPLIED PHYSICS LETTERS, 2007, 90 (11)

[9] Ferroelectric properties of Pt/Pb5Ge3O11/Pt and Pt/Pb5Ge3O11/HfO2/Si structures [J].

Ohara, S ;

Aizawa, K ;

Ishiwara, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2005, 44 (9A) :6644-6647

[10] Metal-ferroelectric-insulator-semiconductor memory FET with long retention and high endurance [J].

Sakai, S ;

Ilangovan, R .

IEEE ELECTRON DEVICE LETTERS, 2004, 25 (06) :369-371

← 1 2 →