AlGaInP red-emitting light emitting diode under extremely high pulsed pumping

被引：9

作者：

Yadav, Amit ^{[1
]}

Titkov, Ilya E. ^{[1
]}

Sokolovskii, Grigorii S. ^{[2
]}

Karpov, Sergey Yu. ^{[3
]}

Dudelev, Vladislav V. ^{[2
]}

Soboleva, Ksenya K. ^{[4
]}

Strassburg, Martin ^{[5
]}

Pietzonka, Ines ^{[5
]}

Lugauer, Hans-Juergen ^{[5
]}

Rafailov, Edik U. ^{[1
]}

机构：

[1] Aston Univ, Aston Inst Photon Technol, Optoelect & Biomed Photon Grp, Birmingham B4 7ET, W Midlands, England

[2] AF Ioffe Phys Tech Inst, Politekhnicheskaya Str 26, St Petersburg 194021, Russia

[3] Soft Impact Ltd, STR Grp, POB 83, St Petersburg 194156, Russia

[4] St Petersburg State Polytech Univ, St Petersburg, Russia

[5] Novel Technol, OSRAM Opto Semicond GmbH, CTO AdvancedConcepts & Engn, Leibnitzstr, D-93055 Regensburg, Germany

来源：

LIGHT-EMITTING DIODES: MATERIALS, DEVICES, AND APPLICATIONS FOR SOLID STATE LIGHTING XX | 2016年 / 9768卷

关键词：

AlGaInP LEDs; external quantum efficiency; self-heating; efficiency droop; INTERNAL QUANTUM EFFICIENCY; DROOP MECHANISM; LEDS;

D O I：

10.1117/12.2213344

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Efficiency of commercial 620 nm AlGaInP Golden Dragon-cased high-power LEDs has been studied under extremely high pump current density up to 4.5 kA/cm(2) and pulse duration from microsecond down to sub-nanosecond range. To understand the nature of LED efficiency decrease with current, pulse width variation is used. Analysis of the pulse-duration dependence of the LED efficiency and emission spectrum suggests the active region overheating to be the major factor controlling the LED efficiency reduction at CW and sub-microsecond pumping. The overheating can be effectively avoided by the use of sub-nanosecond current pulses. A direct correlation between the onset of the efficiency decrease and LED overheating is demonstrated.

引用

页数：7

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