AlGaInP red-emitting light emitting diode under extremely high pulsed pumping

被引：9
|
作者：
Yadav, Amit [1 ]
Titkov, Ilya E. [1 ]
Sokolovskii, Grigorii S. [2 ]
Karpov, Sergey Yu. [3 ]
Dudelev, Vladislav V. [2 ]
Soboleva, Ksenya K. [4 ]
Strassburg, Martin [5 ]
Pietzonka, Ines [5 ]
Lugauer, Hans-Juergen [5 ]
Rafailov, Edik U. [1 ]
机构：
[1] Aston Univ, Aston Inst Photon Technol, Optoelect & Biomed Photon Grp, Birmingham B4 7ET, W Midlands, England
[2] AF Ioffe Phys Tech Inst, Politekhnicheskaya Str 26, St Petersburg 194021, Russia
[3] Soft Impact Ltd, STR Grp, POB 83, St Petersburg 194156, Russia
[4] St Petersburg State Polytech Univ, St Petersburg, Russia
[5] Novel Technol, OSRAM Opto Semicond GmbH, CTO AdvancedConcepts & Engn, Leibnitzstr, D-93055 Regensburg, Germany
来源：
LIGHT-EMITTING DIODES: MATERIALS, DEVICES, AND APPLICATIONS FOR SOLID STATE LIGHTING XX | 2016年 / 9768卷
关键词：
AlGaInP LEDs; external quantum efficiency; self-heating; efficiency droop; INTERNAL QUANTUM EFFICIENCY; DROOP MECHANISM; LEDS;
D O I：
10.1117/12.2213344
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Efficiency of commercial 620 nm AlGaInP Golden Dragon-cased high-power LEDs has been studied under extremely high pump current density up to 4.5 kA/cm(2) and pulse duration from microsecond down to sub-nanosecond range. To understand the nature of LED efficiency decrease with current, pulse width variation is used. Analysis of the pulse-duration dependence of the LED efficiency and emission spectrum suggests the active region overheating to be the major factor controlling the LED efficiency reduction at CW and sub-microsecond pumping. The overheating can be effectively avoided by the use of sub-nanosecond current pulses. A direct correlation between the onset of the efficiency decrease and LED overheating is demonstrated.
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页数：7
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