A Novel Method to Control Leakage and Noise in Domino Circuit for Wide Fan-In OR Logic

被引:0
|
作者
Kumar, Ankur [1 ]
Nagaria, R. K. [1 ]
机构
[1] Motilal Nehru Natl Inst Technol Allahabad, Prayagraj 211004, Uttar Pradesh, India
关键词
Domino circuit; low-power VLSI circuit; leakage current; noise immunity; wide fan-in gates; DYNAMIC CIRCUIT; SRAM DESIGN; KEEPER; CMOS; GATES;
D O I
10.1142/S0218126622500554
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
This paper proposes a novel method to control leakage and noise in domino circuits for wide fan-in OR logic with low power consumption, low process variation, and higher noise margin under the similar delay condition. In the proposed method, output and dynamic nodes are isolated from the PDN (Pull-Down Network) to improve the noise immunity and reduce switching activity. Further, with the aid of a transistor in the stack, the sub-threshold current is reduced. Thus, the proposed domino is applicable for high-speed and low-power applications in deep sub-micro-range. Simulation results show that the proposed domino improves the noise immunity and figure of merit (FOM) by factors of 1.95 and 2.34, respectively, with respect to the conventional domino with a footer. Along with this improvement, 26% reduction is also observed in power consumption. The entire simulations for all the domino circuits are done at 45-nm CMOS technology by using SPECTRE simulator under the Cadence Virtuoso environment.
引用
收藏
页数:29
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