Microscopic theory of second harmonic generation at the Si(100)2x1 surface

被引:0
作者
Mendoza, BS [1 ]
Gaggiotti, A
Del Sole, R
机构
[1] Univ Rome 2, Dipartimento Fis, Ist Nazl Fis Mat, I-00173 Rome, Italy
[2] AC, Ctr Invest Opt, Guanajuato, Mexico
来源
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1998年 / 170卷 / 02期
关键词
D O I
10.1002/(SICI)1521-396X(199812)170:2<343::AID-PSSA343>3.3.CO;2-Q
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We apply a microscopic formulation to calculate the second harmonic spectra of Si(100) 2 x 1. We compare the calculated second harmonic radiated efficiency for several 2 x 1 reconstructions, with different dimer bucklings, with each other. Besides the surface-allowed E-1, E-2 and E-1' resonances, other resonances at lower energies are found and explained in terms of transitions across surface states. We find that the spectra are dominated by the X-parallel to parallel to perpendicular to(s) component of the second-order surface susceptibility.
引用
收藏
页码:343 / 347
页数:5
相关论文
共 22 条
[1]   Second-harmonic spectroscopy of a Si(001) surface during calibrated variations in temperature and hydrogen coverage [J].
Dadap, JI ;
Xu, Z ;
Hu, XF ;
Downer, MC ;
Russell, NM ;
Ekerdt, JG ;
Aktsipetrov, OA .
PHYSICAL REVIEW B, 1997, 56 (20) :13367-13379
[2]   IDENTIFICATION OF STRAINED SILICON LAYERS AT SI-SIO2 INTERFACES AND CLEAN SI SURFACES BY NONLINEAR-OPTICAL SPECTROSCOPY [J].
DAUM, W ;
KRAUSE, HJ ;
REICHEL, U ;
IBACH, H .
PHYSICAL REVIEW LETTERS, 1993, 71 (08) :1234-1237
[3]   Electric field induced second harmonic generation spectroscopy on a metal-oxide-silicon structure [J].
Godefroy, P ;
deJong, W ;
vanHasselt, CW ;
Devillers, MAC ;
Rasing, T .
APPLIED PHYSICS LETTERS, 1996, 68 (14) :1981-1983
[4]  
Hofer U, 1996, APPL PHYS A-MATER, V63, P533, DOI 10.1007/BF01567209
[5]   A review of optical second-harmonic and sum-frequency generation at surfaces and interfaces [J].
McGilp, JF .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1996, 29 (07) :1812-1821
[6]   PROBING SEMICONDUCTOR INTERFACES USING NONLINEAR-OPTICAL SPECTROSCOPY [J].
MCGILP, JF ;
CAVANAGH, M ;
POWER, JR ;
OMAHONY, JD .
OPTICAL ENGINEERING, 1994, 33 (12) :3895-3900
[7]   Microscopic theory of second harmonic generation at Si(100) surfaces [J].
Mendoza, BS ;
Gaggiotti, A ;
Del Sole, R .
PHYSICAL REVIEW LETTERS, 1998, 81 (17) :3781-3784
[8]   Polarizable-bond model for second-harmonic generation [J].
Mendoza, BS ;
Mochan, WL .
PHYSICAL REVIEW B, 1997, 55 (04) :2489-2502
[9]   ELECTRONIC-TRANSITIONS AT SI(111)/SIO2 AND SI(111)/SI3N4 INTERFACES STUDIED BY OPTICAL 2ND-HARMONIC SPECTROSCOPY [J].
MEYER, C ;
LUPKE, G ;
EMMERICHS, U ;
WOLTER, F ;
KURZ, H ;
BJORKMAN, CH ;
LUCOVSKY, G .
PHYSICAL REVIEW LETTERS, 1995, 74 (15) :3001-3004
[10]   Theoretical and experimental optical spectroscopy study of hydrogen adsorption at Si(111)-(7x7) [J].
Noguez, C ;
Beitia, C ;
Preyss, W ;
Shkrebtii, AI ;
Roy, M ;
Borensztein, Y ;
DelSole, R .
PHYSICAL REVIEW LETTERS, 1996, 76 (26) :4923-4926