Design of AIN ultraviolet metasurface for single-/multi-plane holography

被引:16
作者
Gao, Xiang [1 ]
Wan, Rongqiao [1 ]
Yan, Jianchang [2 ,3 ]
Wang, Liancheng [1 ,2 ]
Yi, Xiaoyan [2 ,3 ]
Wang, Junxi [2 ,3 ]
Zhu, Wenhui [1 ]
Li, Jinmin [2 ,3 ]
机构
[1] Cent South Univ, Coll Mech & Elect Engn, State Key Lab High Performance Complex Mfg, Changsha 410083, Hunan, Peoples R China
[2] Chinese Acad Sci, Semicond Lighting Technol Res & Dev Ctr, Inst Semicond, Beijing 100083, Peoples R China
[3] Univ Chinese Acad Sci, Coll Mat Sci & Optoelect Technol, Beijing 101408, Peoples R China
关键词
BROAD-BAND; METALENS; EFFICIENCY; ALGORITHM; IMAGE;
D O I
10.1364/AO.392799
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
The metasurface promises an unprecedented way for manipulating wavefronts and has strengths in large information capacity for the hologram. However, strong absorption loss for most dielectric materials hinders the realization of such a metasurface operating in the ultraviolet (UV) spectrum. Herein, aluminum nitride (AIN) with an ultra-wide bandgap has been utilized as the material of the UV metasurface for multi-plane holography, increasing the information capacity and security level of information storage simultaneously. The metasurface for multi-plane holography achieving a correlation coefficient of over 0.8 with three reconstructed images has been investigated, and also the single-plane holography at an efficiency of 34.05%. Our work might provide potential application in UV nanophotonics. (C) 2020 Optical Society of America
引用
收藏
页码:4398 / 4403
页数:6
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