Electrical and Optical Characteristics of UV Photodetector With Interlaced ZnO Nanowires

被引：41
作者：
Chang, Sheng-Po [1 ,2 ,3 ]
Lu, Chien-Yuan [1 ,2 ,3 ]
Chang, Shoou-Jinn [1 ,2 ,3 ]
Chiou, Yu-Zung [4 ]
Hsueh, Ting-Jen [5 ]
Hsu, Cheng-Liang [6 ]
机构：
[1] Natl Cheng Kung Univ, Dept Elect Engn, Tainan 70101, Taiwan
[2] Natl Cheng Kung Univ, Inst Microelect, Adv Optoelect Technol Ctr, Tainan 70101, Taiwan
[3] Natl Cheng Kung Univ, Ctr Micro Nano Sci & Tech nol, Tainan 70101, Taiwan
[4] So Taiwan Univ, Dept Elect Engn, Tainan 710, Taiwan
[5] Natl Nano Device Labs, Tainan 741, Taiwan
[6] Natl Univ Tainan, Dept Elect Engn, Tainan 700, Taiwan
来源：
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS | 2011年 / 17卷 / 04期
关键词：
Detectivity; nanowire (NW); noise; noise equivalent power (NEP); photodetector; zinc oxide (ZnO); FIELD-EFFECT TRANSISTORS; SENSITIZED SOLAR-CELLS; ETHANOL GAS SENSORS; ULTRAVIOLET PHOTODETECTORS; GA/GLASS TEMPLATES; MATERIALS SCIENCE; ROOM-TEMPERATURE; CARBON NANOTUBE; SEMICONDUCTOR; FABRICATION;
D O I：
10.1109/JSTQE.2010.2046884
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A zinc oxide (ZnO) nanowire (NW) photodetector was fabricated with a simple method by bridging the gap of interdigitated gallium-doped ZnO pattern deposited on a silicon oxide (SiO2) thin film with interlaced ZnO NWs. With an incident wavelength of 375 nm, it was found that measured responsivity was 0.055 A/W for the interlaced ZnO NWs photodetector with a 1 V applied bias. The transient time constants measured during the turn-ON and turn-OFF states were tau(ON) = 12.72 ms and tau(OFF) = 447.66 ms, respectively. Furthermore, the low-frequency noise spectra obtained from the ultraviolet photodetector were purely due to the 1/f noise. Besides, the noise equivalent power and normalized detectivity (D*) of the ZnO NW photodetector were 2.32 x 10(-9) Wand 7.43 x 10(9) cm.Hz(0.5).W-1, respectively.
引用
收藏
页码：990 / 995
页数：6
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