Heterogeneous, Three-Dimensional Texturing of Graphene

被引:89
作者
Wang, Michael Cai [1 ]
Chun, SungGyu [1 ]
Han, Ryan Steven [1 ]
Ashraf, Ali [1 ]
Kang, Pilgyu [1 ]
Nam, SungWoo [1 ,2 ]
机构
[1] Univ Illinois, Dept Mech Sci & Engn, Urbana, IL 61801 USA
[2] Univ Illinois, Dept Mat Sci & Engn, Urbana, IL 61801 USA
关键词
Graphene; graphite; shape-memory polymer; shrinkage; crumples; ENHANCED CHEMICAL-REACTIVITY; LARGE-AREA; STRAIN; FILMS; PERFORMANCE; TRANSISTORS; TRANSPORT; RIPPLES; ENERGY;
D O I
10.1021/nl504612y
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
We report a single-step strategy to achieve heterogeneous, three-dimensional (3D) texturing of graphene and,graphite by using thermally activated shape-memory polymer substrate. Uniform arrays of graphene crumples can be Created on the centimeter scale:by controlling simple thermal processing parameters :,without compromising the electrical properties, of graphene. In addition, we show the,capability to selectively pattern. crumples from otherwise flat graphene and graphene/graphite in a localized manner, which has not been previously achievable using other methods. Finally, we demonstrate 3D crumpled graphene field-effect transistor arrays in a solution-gated configuration. The presented approach has the capability to conform onto arbitrary 3D surfaces, a necessary prerequisite for adaptive electronics, and will enable facile large-scale topography engineering of not only graphene but also other thin-film and 2D materials in the future.
引用
收藏
页码:1829 / 1835
页数:7
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