An 80-Gb/s optoelectronic delayed flip-flop IC using resonant tunneling diodes and uni-traveling-carrier photodiode

被引：39
作者：
Sano, K [1 ]
Murata, K
Otsuji, T
Akeyoshi, T
Shimizu, N
Sano, E
机构：
[1] NTT, Photon Labs, Kanagawa 2430198, Japan
[2] Kyushu Inst Technol, Iizuka, Fukuoka 8208502, Japan
来源：
IEEE JOURNAL OF SOLID-STATE CIRCUITS | 2001年 / 36卷 / 02期
关键词：
flip-flop; optical communications; optoelectronic integrated circuit (OEIC); resonant tunneling diode; uni-traveling-carrier photodiode;
D O I：
10.1109/4.902769
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper describes an 80-Gb/s optoelectronic delayed flip-flop (D-FF) IC that uses resonant tunneling diodes (RTDs) and a uni-traveling-carrier photodiode (UTC-PD). A circuit design that considers the ac currents passing through RTDs and UTC-PD is key to boosting circuit operation speed. A monolithically fabricated IC operated at 80 Gb/s with a low power dissipation of 7.68 mW, The operation speed of 80 Gb/s is the highest among ail reported flip-flops. To clarify the maximum operation speed, we analyze the factors limiting circuit speed. Although the bandwidth of UTC-PD limits the maximum speed of operation to 80 Gb/s at present, the circuit has the potential to offer 100-Gb/s-class operation.
引用
收藏
页码：281 / 289
页数：9
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