Arc discharge boron nitrogen doping of carbon nanotubes

被引:23
作者
Ben Belgacem, Abir [1 ,3 ]
Hinkov, Ivaylo [2 ]
Ben Yahia, Sana [3 ]
Brinza, Ovidiu [1 ]
Farhat, Samir [1 ]
机构
[1] Univ Paris 13, PRES Sorbonne Paris Cite, LSPM UPR 3407, CNRS,Lab Sci Proc & Mat, F-93430 Villetaneuse, France
[2] Univ Chem Technol & Met, Dept Chem Engn, 8 St Kl Ohridsky Blvd, BU-1756 Sofia, Bulgaria
[3] Technopole Borj Cedria, Ctr Rech & Technol Energie, BP 95, Hammam Lif 2050, Tunisia
关键词
BCN nanotubes; Growth; Doping; Arc discharge; Modeling; C-N NANOTUBES; ELECTRIC-ARC; GROWTH; NANOMATERIALS;
D O I
10.1016/j.mtcomm.2016.08.001
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
This article describes the significant roles of process parameters in the deposition of boron and nitrogen co-doped multi-walled carbon nanotubes via the arc-discharge process. The fabrication process is based on the vaporization of solid hexagonal boron nitride embedded in graphite cylinders in a nitrogen atmosphere with pressure varying from 350 mbar to 700 mbar and controlled current density between 150 and 420 A/cm(2). Our results show the presence of significant amount of doped boron carbon nitride nanotubes in the cathodic deposit. These nanotubes have a narrow diameter distribution (20-30 nm) and a length up to 1 mu m as analyzed by scanning electron microscopy and transmission electron microscopy. In addition to the experimental study, numerical simulations were performed to determine the temperature and chemical species distributions in the arc plasma under specific boron carbon nitride nanotubes synthesis conditions, thereby providing valuable insight into nanotubes growth and doping mechanisms in the arc. (C) 2016 Elsevier Ltd. All rights reserved.
引用
收藏
页码:183 / 195
页数:13
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