Infrared-light interferometry and a phase-stepping algorithm for measuring the three-dimensional topography of components covered with GaAs or Si

被引：3

作者：

Chou, Xiujian ^{[1
]}

Niu, Kangkang ^{[1
]}

Liu, Yi ^{[1
]}

Xue, Chenyang ^{[1
]}

Liu, Jun ^{[1
]}

Zhang, Wendong ^{[1
]}

机构：

[1] N Univ China, Key Lab Instrumentat Sci & Dynam Measurement, Minist Educ, Natl Key Lab Sci & Technol Elect Test & Measureme, Taiyuan 030051, Shanxi Province, Peoples R China

来源：

OPTICAL REVIEW | 2012年 / 19卷 / 01期

基金：

美国国家科学基金会; 中国博士后科学基金;

关键词：

white-light scanning interferometry; 3D topography; infrared-light interference; phase-stepping algorithm; INTERFERENCE MICROSCOPY; SCANNING INTERFEROMETRY; THICKNESS-PROFILE; FILM; PROFILOMETRY;

D O I：

10.1007/s10043-012-0006-x

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

White-light scanning interferometry is extended from the visible-light region to the infrared-light region to measure the three-dimensional (3D) topography of components. An infrared-light interference system based on a linnik-type interferometric microscope is developed according to the principle of transmission of semiconductor materials in the infrared-light region. The 3D topography is measured using the components covered with a Si or GaAs wafer based on a phase-stepping algorithm. The 3D topography can be obtained accurately and relative step heights can be determined within an error less than 3% compared with the instrument MSA 400, a well-known commercially available apparatus used in the field of 3D topography measurement.

引用

页码：34 / 38

页数：5

共 12 条

[1] CORRELATION MICROSCOPE [J].