Effect of Charge Trapping/Detrapping on Threshold Voltage Shift of IGZO TFTs under AC Bias Stress

被引：39

作者：

Kim, Sun-Jae ^{[1
]}

Lee, Soo-Yeon ^{[1
]}

Lee, Young Wook ^{[1
]}

Kuk, Seung-Hee ^{[1
]}

Kwon, Jang-Yeon ^{[2
]}

Hana, Min-Koo ^{[1
]}

机构：

[1] Seoul Natl Univ, Dept Elect Engn & Comp Sci, Seoul 151744, South Korea

[2] Yonsei Univ, Sch Integrated Technol, Inchon 406840, South Korea

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2012年 / 15卷 / 04期

关键词：

THIN-FILM TRANSISTORS;

D O I：

10.1149/2.026204esl

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

We have investigated the dependency of alternating current (AC) stress duty ratio on the stability of indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs). As the duty ratio increases from 0.25 to 0.75, threshold voltage (V-TH) shift under the AC gate bias stress was increased from 4.10 V to 5.01 V, without degradation of subthreshold slope and mobility. The dominant mechanism of V-TH shift was considered the charge trapping and V-TH shift along with time was well fitted to a stretched-exponential model. The V-TH shift was suppressed with a reduction of trap density by employing N2O plasma treatment on the gate insulator. (C) 2012 The Electrochemical Society. [DOI:10.1149/2.026204esl] All rights reserved.

引用

页码：H108 / H110

页数：3

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