4.5kV 4H-SiC diodes with ideal forward characteristic

被引：23
|
作者：
Lendenmann, H [1 ]
Mukhitdinov, A [1 ]
Dahlquist, F [1 ]
Bleichner, H [1 ]
Irwin, M [1 ]
Söderholm, R [1 ]
Skytt, P [1 ]
机构：
[1] ABB Corp Res, SE-72178 Vasteras, Sweden
来源：
ISPSD'01: PROCEEDINGS OF THE 13TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS | 2001年
关键词：
D O I：
10.1109/ISPSD.2001.934553
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
4H-SiC diodes with 4.5kV blocking and epitaxially grown anode emitters show near theoretical forward voltages of 3.08V at 100A/cm(2) and 4.10V at 1000A/cm(2) at RT, (2.96V and 4.15V at 125 degreesC), while diodes with implanted emitters show 3.5 - 3.8V at 100A/cm(2) with -4mV/K. The transient recovery losses (E-rec, Q(rr)) are as low as 1/100 of the reference silicon device. Paralleling of the SiC diodes with silicon IGBTs enables 400A switching, and system loss savings of nearly 50% compared to state-of-art silicon technology.
引用
收藏
页码：31 / 34
页数：4
相关论文
共 50 条
  • [1] Comparative Study of Contact Topographies of 4.5kV SiC MPS Diodes for Optimizing the Forward Characteristics
    Huang, Yaren
    Wachutka, Gerhard
    2016 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES (SISPAD), 2016, : 117 - 120
  • [2] Barrier height homogeneity for 4.5 kV 4H-SiC Schottky diodes
    Bluet, J. M.
    Ziane, D.
    Guillot, G.
    Tournier, D.
    Brosselard, P.
    Montserrat, J.
    Godignon, P.
    SUPERLATTICES AND MICROSTRUCTURES, 2006, 40 (4-6) : 399 - 404
  • [3] Low loss, large area 4.5 kV 4H-SiC PIN diodes with reduced forward voltage drift
    Brosselard, P.
    Perez-Tomas, A.
    Hassan, J.
    Camara, N.
    Jorda, X.
    Vellvehi, M.
    Godignon, P.
    Millan, J.
    Bergman, J. P.
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2009, 24 (09)
  • [4] A Trade-off Between Nominal Forward Current Density and Surge Current Capability for 4.5kV SiC MPS Diodes
    Huang, Yaren
    Erlbacher, Tobias
    Buettner, Jonas
    Wachutka, Gerhard
    2016 28TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD), 2016, : 63 - 66
  • [5] The Optimization of 3.3 kV 4H-SiC JBS Diodes
    Renz, Arne Benjamin
    Shah, Vishal Ajit
    Vavasour, Oliver James
    Baker, Guy William Clarke
    Bonyadi, Yegi
    Sharma, Yogesh
    Pathirana, Vasantha
    Trajkovic, Tanya
    Mawby, Phil
    Antoniou, Marina
    Gammon, Peter Michael
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2022, 69 (01) : 298 - 303
  • [6] Large area, avalanche-stable 4H-SiC PIN diodes with VBR > 4.5 kV
    Peters, D
    Elpelt, R
    Schörner, R
    Dohnke, KO
    Friedrichs, P
    Stephani, D
    SILICON CARBIDE AND RELATED MATERIALS 2004, 2005, 483 : 977 - 980
  • [7] Ideal 4H-SiC pn junction and its characteristic shunt
    Strel'chuk, AM
    Savkina, NS
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2001, 80 (1-3): : 378 - 382
  • [8] 3.3 kV-10A 4H-SiC PiN diodes
    Brosselard, Pierre
    Camara, Nicolas
    Hassan, Jawad
    Jorda, Xavier
    Bergman, Peder
    Montserrat, Josep
    Millan, Jose
    SILICON CARBIDE AND RELATED MATERIALS 2007, PTS 1 AND 2, 2009, 600-603 : 991 - +
  • [9] 3.6 kV 4H-SiC JBS diodes with low RonS
    Sugawara, Y
    Asano, K
    Saito, R
    SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 2000, 338-3 : 1183 - 1186
  • [10] Development of 3.6 kV 4H-SiC PiN Power Diodes
    Zou, Xiao
    Yue, Ruifeng
    Wang, Yan
    2017 INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC), 2017,
12345