Photoluminescence and Raman spectroscopy of MBE-grown InN nanocolumns

被引：4
|
作者：
Segura-Ruiz, J. [1 ]
Garro, N. [1 ,2 ]
Cantarero, A. [1 ]
Denker, C. [3 ]
Werner, F. [3 ]
Malindretos, J. [3 ]
Rizzi, A. [3 ]
机构：
[1] Univ Valencia, Inst Mat Sci, POB 22085, Valencia 46071, Spain
[2] Univ Valencia, Fundacio Gen, E-46071 Valencia, Spain
[3] Univ Gottingen, Inst Phys 4, Gottingen, Germany
来源：
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 6 | 2008年 / 5卷 / 06期
关键词：
D O I：
10.1002/pssc.200778585
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
InN nanocolumns growth under different conditions by plasma-assisted molecular beam epitaxy on p-Si (111) sub-strates are studied by micro-Raman and photoluminescence (PL) spectroscopics. The nanocolumns are free of strain and have an improved crystal quality as shown by the frequency and linewidth, of the nonpolar E-2(h) mode. Uncoupled polar modes coexist with a couple LO phonon-plasmon mode and are sensitive to the nanocolumn morphology. Variations in the growth conditions also modify the PL spectra significantly. An increase in the PL energy also involves a reduction of the integrated intensity and an increase of the PL linewidth. This overall phenomenology highlights the role of the surface accumulation layer in these nanostructures. (c) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
引用
收藏
页码：1678 / +
页数：3
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