Thickness-dependent structural phase transition of strained SrRuO3 ultrathin films: The role of octahedral tilt

被引:101
作者
Chang, Seo Hyoung [1 ]
Chang, Young Jun [1 ,2 ]
Jang, S. Y. [1 ]
Jeong, D. W. [1 ]
Jung, C. U. [3 ]
Kim, Y. -J. [4 ]
Chung, J. -S. [5 ]
Noh, T. W. [1 ]
机构
[1] Seoul Natl Univ, Dept Phys & Astron, ReCFI, Seoul 151747, South Korea
[2] Univ Calif Berkeley, Lawrence Berkeley Lab, Adv Light Source, Berkeley, CA 94720 USA
[3] Hankuk Univ Foreign Studies, Dept Phys, Yongin 449791, Gyeonggi, South Korea
[4] Univ Toronto, Dept Phys, Toronto, ON M5S 1A7, Canada
[5] Soongsil Univ, Dept Phys, Seoul 156743, South Korea
关键词
D O I
10.1103/PhysRevB.84.104101
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We grew epitaxial SrRuO3 (SRO) films on SrTiO3 (STO) (001) substrates with SRO layer thicknesses (t) between 10 and 200 pseudocubic unit cells (uc). Using the square net of the cubic STO surface, we were able to epi-stabilize the tetragonal SRO phase at room temperature for ultrathin films with t <= 17 uc. On the other hand thicker films with t >= 19 uc have an orthorhombic crystal structure similar to that of bulk SRO at room temperature. With increasing temperature, the orthorhombic films undergo a structural transition to the tetragonal phase at T-OT. The value of T-OT and the orthorhombicity factor at room temperature are reduced with decreasing film thickness. We also observed half-order Bragg reflections, indicating that the tetragonal structure arises from the suppression of the tilt angle of RuO6 octahedra. The observed critical thickness around t(c) similar to 18 uc is much larger than the recent theoretical prediction (i.e., less than 2 uc) [J. He, A. Borisevich, S. V. Kalinin, S. J. Pennycook, and S. T. Pantelides, Phys. Rev. Lett. 105, 227203 (2010)]. This work thus demonstrates that the lattice symmetry mismatch at the interface plays an important role in determining the structural properties of perovskite films.
引用
收藏
页数:5
相关论文
共 27 条
[1]   Electrostatic modification of novel materials [J].
Ahn, C. H. ;
Bhattacharya, A. ;
Di Ventra, M. ;
Eckstein, J. N. ;
Frisbie, C. Daniel ;
Gershenson, M. E. ;
Goldman, A. M. ;
Inoue, I. H. ;
Mannhart, J. ;
Millis, Andrew J. ;
Morpurgo, Alberto F. ;
Natelson, Douglas ;
Triscone, Jean-Marc .
REVIEWS OF MODERN PHYSICS, 2006, 78 (04) :1185-1212
[2]   Transport properties, thermodynamic properties, and electronic structure of SrRuO3 [J].
Allen, PB ;
Berger, H ;
Chauvet, O ;
Forro, L ;
Jarlborg, T ;
Junod, A ;
Revaz, B ;
Santi, G .
PHYSICAL REVIEW B, 1996, 53 (08) :4393-4398
[3]   A STRUCTURAL PHASE-TRANSITION INDUCED BY AN EXTERNAL MAGNETIC-FIELD [J].
ASAMITSU, A ;
MORITOMO, Y ;
TOMIOKA, Y ;
ARIMA, T ;
TOKURA, Y .
NATURE, 1995, 373 (6513) :407-409
[4]   Processing technologies for ferroelectric thin films and heterostructures [J].
Auciello, O ;
Foster, CM ;
Ramesh, R .
ANNUAL REVIEW OF MATERIALS SCIENCE, 1998, 28 :501-531
[5]   Suppression of Octahedral Tilts and Associated Changes in Electronic Properties at Epitaxial Oxide Heterostructure Interfaces [J].
Borisevich, A. Y. ;
Chang, H. J. ;
Huijben, M. ;
Oxley, M. P. ;
Okamoto, S. ;
Niranjan, M. K. ;
Burton, J. D. ;
Tsymbal, E. Y. ;
Chu, Y. H. ;
Yu, P. ;
Ramesh, R. ;
Kalinin, S. V. ;
Pennycook, S. J. .
PHYSICAL REVIEW LETTERS, 2010, 105 (08)
[6]   Fundamental Thickness Limit of Itinerant Ferromagnetic SrRuO3 Thin Films [J].
Chang, Young Jun ;
Kim, Choong H. ;
Phark, S. -H. ;
Kim, Y. S. ;
Yu, J. ;
Noh, T. W. .
PHYSICAL REVIEW LETTERS, 2009, 103 (05)
[7]   Enhancement of ferroelectricity in strained BaTiO3 thin films [J].
Choi, KJ ;
Biegalski, M ;
Li, YL ;
Sharan, A ;
Schubert, J ;
Uecker, R ;
Reiche, P ;
Chen, YB ;
Pan, XQ ;
Gopalan, V ;
Chen, LQ ;
Schlom, DG ;
Eom, CB .
SCIENCE, 2004, 306 (5698) :1005-1009
[8]   Phase-Transition Temperatures of Strained Single-Crystal SrRuO3 Thin Films [J].
Choi, Kyoung Jin ;
Baek, Seung Hyub ;
Jang, Ho Won ;
Belenky, Land J. ;
Lyubchenko, M. ;
Eom, Chang-Beom .
ADVANCED MATERIALS, 2010, 22 (06) :759-+
[9]   The anomalous Hall effect and magnetic monopoles in momentum space [J].
Fang, Z ;
Nagaosa, N ;
Takahashi, KS ;
Asamitsu, A ;
Mathieu, R ;
Ogasawara, T ;
Yamada, H ;
Kawasaki, M ;
Tokura, Y ;
Terakura, K .
SCIENCE, 2003, 302 (5642) :92-95
[10]   Ferroelectricity in ultrathin perovskite films [J].
Fong, DD ;
Stephenson, GB ;
Streiffer, SK ;
Eastman, JA ;
Auciello, O ;
Fuoss, PH ;
Thompson, C .
SCIENCE, 2004, 304 (5677) :1650-1653