Microstructure of non-polar GaN on LiGaO2 grown by plasma-assisted MBE

被引：6

作者：

Shih, Cheng-Hung ^{[2
]}

Huang, Teng-Hsing ^{[3
]}

Schuber, Ralf ^{[1
]}

Chen, Yen-Liang ^{[2
]}

Chang, Liuwen ^{[3
]}

Lo, Ikai ^{[2
]}

Chou, Mitch M. C. ^{[3
]}

Schaadt, Daniel M. ^{[1
]}

机构：

[1] Karlsruhe Inst Technol, Ctr Funct Nanostruct CFN, Inst Appl Phys DFG, D-76131 Karlsruhe, Germany

[2] Natl Sun Yat Sen Univ, Dept Phys, Kaohsiung 80424, Taiwan

[3] Natl Sun Yat Sen Univ, Dept Mat & Optoelect Sci, Kaohsiung 80424, Taiwan

来源：

NANOSCALE RESEARCH LETTERS | 2011年 / 6卷

关键词：

A-PLANE GAN;

D O I：

10.1186/1556-276X-6-425

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We have investigated the structure of non-polar GaN, both on the M - and A-plane, grown on LiGaO2 by plasma-assisted molecular beam epitaxy. The epitaxial relationship and the microstructure of the GaN films are investigated by transmission electron microscopy (TEM). The already reported epi-taxial relationship [11 (2) over bar0](GaN)parallel to[010](LGO) and (1 (1) over bar 00)(GaN)parallel to(100)(LGO) for M -plane GaN is confirmed. The main defects are threading dislocations and stacking faults in both samples. For the M -plane sample, the density of threading dislocations is around 1 x 10(11) cm(-2) and the stacking fault density amounts to approximately 2 x 10(5) cm(-1). In the A-plane sample, a threading dislocation density in the same order was found, while the stacking fault density is much lower than in the M -plane sample.

引用

页码：1 / 5

页数：5

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