Ultrafast carrier dynamics of InGaAsN and InGaAs single quantum wells

被引：3
作者：
Hsu, Chih-Chang [1 ,2 ]
Lin, Ja-Hon [3 ]
Chen, Ying-Shu [1 ,2 ]
Lin, Ying-Hsiu [1 ,2 ]
Kuo, Hao-Chung [1 ,2 ]
Wang, Shing-Chung [1 ,2 ]
Hsieh, Wen-Feng [1 ,2 ]
Tansu, Nelson [4 ]
Mawst, Luke J. [5 ]
机构：
[1] Natl Chiao Tung Univ, Dept Photon, Hsinchu 30050, Taiwan
[2] Natl Chiao Tung Univ, Inst Electroopt Engn, Hsinchu 30050, Taiwan
[3] Natl Taipei Univ Technol, Dept Electroopt Engn, Taipei 106, Taiwan
[4] Lehigh Univ, Dept Elect & Comp Engn, Ctr Opt Technol, Bethlehem, PA 18015 USA
[5] Univ Wisconsin, Dept Elect & Comp Engn, Reed Ctr Photon, Madison, WI 53706 USA
来源：
JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2008年 / 41卷 / 08期
关键词：
D O I：
10.1088/0022-3727/41/8/085107
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Striking differences in differential reflectance and carrier relaxation in In0.4Ga0.6As and In0.4Ga0.6As0.98N0.02 single quantum wells (SQWs) were studied using ultrafast time-resolved photoreflectance. Even with extremely thin SQW of only 60 angstrom within 3000 angstrom wide GaAs confining layers, negative and positive differential reflectance was observed for the excitation photon energy far above the bandgaps at 820 and 880 nm for both samples. Due to absorption by the GaAs confining layer, the peak differential reflectance pumped at 820 nm is an order of magnitude larger than that pumped at 880 nm; and it is larger for InGaAs SQWs than for InGaAsN SQWs. The shorter carrier lifetimes of these samples result from carrier - carrier scattering as pumped at both wavelengths. The longer carrier lifetime as pumped at 880 nm is due to hot phonon decay in InGaAs but may be due to stimulated emission in InGaAsN. The results reveal that the carrier dynamics is strongly affected by N incorporation that causes local defects in InGaAsN SQWs to reduce the carrier relaxation.
引用
收藏
页数：6
相关论文
共 31 条
[1]   Theoretical study of Auger recombination in a GaInNAs 1.3 μm quantum well laser structure [J].
Andreev, AD ;
O'Reilly, EP .
APPLIED PHYSICS LETTERS, 2004, 84 (11) :1826-1828
[2]   Increased monomolecular recombination in MOCVD grown 1.3-μm InGaAsN-GaAsP-GaAs QW lasers from carrier lifetime measurements [J].
Anton, O ;
Menoni, CS ;
Yeh, JY ;
Mawst, LJ ;
Pikal, JM ;
Tansu, N .
IEEE PHOTONICS TECHNOLOGY LETTERS, 2005, 17 (05) :953-955
[3]   PICOSECOND SPECTROSCOPY OF SEMICONDUCTORS [J].
AUSTON, DH ;
MCAFEE, S ;
SHANK, CV ;
IPPEN, EP ;
TESCHKE, O .
SOLID-STATE ELECTRONICS, 1978, 21 (01) :147-150
[4]   CARRIER-INDUCED CHANGE IN REFRACTIVE-INDEX OF INP, GAAS, AND INGAASP [J].
BENNETT, BR ;
SOREF, RA ;
DELALAMO, JA .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1990, 26 (01) :113-122
[5]   Carrier dynamics and high-speed modulation properties of tunnel injection InGaAs-GaAs quantum-dot lasers [J].
Bhattacharya, P ;
Ghosh, S ;
Pradhan, S ;
Singh, J ;
Wu, ZK ;
Urayama, J ;
Kim, K ;
Norris, TB .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 2003, 39 (08) :952-962
[6]   Well-width dependence of exciton-phonon scattering in InxGa1-xAs/GaAs single quantum wells [J].
Borri, P ;
Langbein, W ;
Hvam, JM ;
Martelli, F .
PHYSICAL REVIEW B, 1999, 59 (03) :2215-2222
[7]   Ultrafast (GaIn)(NAs)/GaAs vertical-cavity surface-emitting laser for the 1.3 μm wavelength regime [J].
Ellmers, C ;
Höhnsdorf, F ;
Koch, J ;
Agert, C ;
Leu, S ;
Karaiskaj, D ;
Hofmann, M ;
Stolz, W ;
Rühle, WW .
APPLIED PHYSICS LETTERS, 1999, 74 (16) :2271-2273
[8]   FEMTOSECOND TRANSIENT REFLECTIVITY MEASUREMENTS AS A PROBE FOR PROCESS-INDUCED DEFECTS IN SILICON [J].
ESSER, A ;
KUTT, W ;
STRAHNEN, M ;
MAIDORN, G ;
KURZ, H .
APPLIED SURFACE SCIENCE, 1990, 46 (1-4) :446-450
[9]   Microscopic evaluation of spontaneous emission- and Auger-processes in semiconductor lasers [J].
Hader, J ;
Moloney, JV ;
Koch, SW .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 2005, 41 (10) :1217-1226
[10]   Recombination mechanisms in GaInNAs/GaAs multiple quantum wells [J].
Kaschner, A ;
Lüttgert, T ;
Born, H ;
Hoffmann, A ;
Egorov, AY ;
Riechert, H .
APPLIED PHYSICS LETTERS, 2001, 78 (10) :1391-1393
1234