Low-Temperature and Solution-Processed Amorphous WOx as Electron-Selective Layer for Perovskite Solar Cells

被引:234
作者
Wang, Kai [1 ]
Shi, Yantao [1 ]
Dong, Qingshun [1 ]
Li, Yu [3 ]
Wang, Shufeng [3 ]
Yu, Xufeng [1 ]
Wu, Mengyao [1 ]
Ma, Tingli [2 ]
机构
[1] Dalian Univ Technol, Sch Chem, State Key Lab Fine Chem, Dalian 116024, Peoples R China
[2] Kyushu Inst Technol, Grad Sch Life Sci & Syst Engn, Kitakyushu, Fukuoka 8080196, Japan
[3] Peking Univ, Dept Phys, Beijing 100871, Peoples R China
来源
JOURNAL OF PHYSICAL CHEMISTRY LETTERS | 2015年 / 6卷 / 05期
基金
对外科技合作项目(国际科技项目); 中国国家自然科学基金;
关键词
ZNO NANOSTRUCTURES; LOW-COST; PHOTOVOLTAICS; PERFORMANCE; TRIHALIDE; MECHANISM; VOLTAGE; FILMS;
D O I
10.1021/acs.jpclett.5b00010
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The electron-selective layer (ESL) is an indispensable component of perovskite solar cells (PSCs) and is responsible for the collection of photogenerated electrons Preparing ESL at a low temperature is significant for future fabrication of flexible PSCs. In this work, solution-processed amorphous WOx thin film was prepared facilely at low temperature and used as ESL hi PSCs. Results indicated that a large quantity of nanocaves were observed in the WOx thin film. In comparison with the conventional TiO2 ESL, the WO, ESL exhibited comparable light transmittance but higher electrical conductivity. Compared with the TiO2-based PSCs, PSCs that use WOx ESL exhibited comparable photoelectric conversion efficiency, larger short-circuit current density, but lower open circuit voltage. Electrochemical characterization indicated that the unsatisfied open circuit voltage and fill factor were caused by the hiherent charge recombination. This study demonstrated that this material is an excellent candidate for ESL.
引用
收藏
页码:755 / 759
页数:5
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