Effect of temperature and silicon resistivity on the elaboration of silicon nanowires by electroless etching

被引：11

作者：

Fellahi, Ouarda ^{[1
]}

Hadjersi, Toufik

Maamache, Mustapha ^{[2
]}

Bouanik, Sihem

Manseri, Amar

机构：

[1] Dept Thin Films & Applicat, Silicon Technol Dev Unit, Algiers, Algeria

[2] Univ Ferhat Abbas de Setif, Lab Phys Quant & Syst Dynam, Setif, Algeria

来源：

APPLIED SURFACE SCIENCE | 2010年 / 257卷 / 02期

关键词：

Silicon nanowires; Electroless etching; Ag nanoparticles; Catalyst; METAL; PHOTOLUMINESCENCE; NANOPARTICLES; FABRICATION; SURFACE;

D O I：

10.1016/j.apsusc.2010.07.039

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The morphology of silicon nanowire (SiNW) layers formed by Ag-assisted electroless etching in HF/H2O2 solution was studied. Prior to the etching, the Ag nanoparticles were deposited on p-type Si(1 0 0) wafers by electroless metal deposition (EMD) in HF/AgNO3 solution at room temperature. The effect of etching temperature and silicon resistivity on the formation process of nanowires was studied. The secondary ion mass spectra (SIMS) technique is used to study the penetration of silver in the etched layers. The morphology of etched layers was investigated by scanning electron microscope (SEM). (C) 2010 Elsevier B. V. All rights reserved.

引用

页码：591 / 595

页数：5

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