A Triple-Band SiGe HBT Differential VCO Using a Reconfigurable Multi-Band Resonator

被引：0
|
作者：
Itoh, Yasushi [1 ]
Tanaka, Shota [1 ]
机构：
[1] Shonan Inst Technol, Grad Sch, Elect & Informat Engn, 1-1-25 Tsujido Nishikaigan, Fujisawa, Kanagawa 2518511, Japan
来源：
40TH EUROPEAN MICROWAVE CONFERENCE | 2010年
关键词：
VOLTAGE-CONTROLLED OSCILLATOR; WIDE-TUNING-RANGE; CMOS;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A triple-band SiGe HBT differential VCO has been developed for the next generation multi-band and/or multi-mode wireless radios. It utilizes a reconfigurablemulti-band resonator which is based on a dual-band resonator but can achieve a tripleband resonation by using a band-selective switch. The bandselective switch is comprised of a two-terminal SiGe HBT with base and collector short-circuited and can provide three different band-switching conditions for the multi-band resonator. The implemented 0.35-. m SiGe HBT differential VCO has achieved a low-band oscillation from 0.48 to 0.87 GHz, a middle-band oscillation from 1.75 to 1.92 GHz, and a high-band oscillation from 1.91 to 2.13 GHz. The phase noise at 100 kHz offset varies from -100 to -115dBc/Hz for all bands. This is the first report on the triple-band differential VCO using a dual-band resonator.
引用
收藏
页码：1603 / 1606
页数：4
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