A mathematical model for material removal and chemical-mechanical synergy in chemical-mechanical polishing at molecular scale

被引：15

作者：

Bai, J. ^{[1
]}

Zhao, Y. W. ^{[1
]}

Wang, Y. G. ^{[1
]}

机构：

[1] So Yangtze Univ, Coll Mech Engn, Wuxi 214122, Peoples R China

来源：

APPLIED SURFACE SCIENCE | 2007年 / 253卷 / 20期

关键词：

chemical-mechanical polishing; molecular scale; film generation rate; modeling;

D O I：

10.1016/j.apsusc.2007.04.027

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

This paper presents a mathematical material removal model based on the chemical and mechanical synergistic effects in the chemical-mechanical polishing (CMP) process. It seems to explain the transition from a chemically dominant region to a mechanically dominant region. In addition, this model predicts the effects of most variables involved in the CMP process including the processing conditions (velocity, downpressure), pad properties (modulus, hardness and asperity sizes) and slurry characteristics (particle size, concentration and distribution). The results reveal some insights into the micro-contact and wear mechanisms of the CMP process. (c) 2007 Elsevier B.V. All rights reserved.

引用

页码：8489 / 8494

页数：6

共 14 条

[1]

KOGUT L, 2003, 15 ANN CML SPONS M U

[2]

LI SH, 2000, SEMICONDUCTORS SEMIM

[3] Effects of abrasive size distribution in chemical mechanical planarization: Modeling and verification [J].

Luo, JF ;

Dornfeld, DA .

IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, 2003, 16 (03) :469-476

[4] Material removal regions in chemical mechanical planarization for submicron integrated circuit fabrication: Coupling effects of slurry chemicals, abrasive size distribution, and wafer-pad contact area [J].

Luo, JF ;

Dornfeld, DA .

IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, 2003, 16 (01) :45-56

[5]

MARTINEZ MA, 1994, SOLID STATE TECHN, V5, P26

[6]

OUMA DO, 1999, THESIS MIT US

[7]

Preston F.W., 1927, J SOC GLASS TECHNOLO, V11, P214

[8] A chemical mechanical polishing model incorporating both the chemical and mechanical effects [J].

Qin, K ;

Moudgil, B ;

Park, CW .

THIN SOLID FILMS, 2004, 446 (02) :277-286

[9]

Runnels S. R., 1994, Journal of the Electrochemical Society, V141, P1698, DOI 10.1149/1.2054985

[10]

Sohn IS, 2000, MATER RES SOC SYMP P, V566, P181

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