Nanohole pattern formation on germanium induced by focused ion beam and broad beam Ga+ irradiation

被引：28

作者：

Fritzsche, Monika ^{[1
]}

Muecklich, Arndt ^{[1
]}

Facsko, Stefan ^{[1
]}

机构：

[1] Helmholtz Zentrum Dresden Rossendorf, Inst Ion Beam Phys & Mat Res, D-01314 Dresden, Germany

来源：

APPLIED PHYSICS LETTERS | 2012年 / 100卷 / 22期

关键词：

SILICON;

D O I：

10.1063/1.4721662

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Hexagonally ordered nanohole patterns were produced on Ge(100) surfaces by focused Ga+ ion beam and broad Ga+ ion beam irradiations with 5 keV energy under normal incidence. Identical patterns were obtained by irradiations with a scanning focused ion beam under different irradiation conditions and with a broad Ga+ beam without scanning and five orders of magnitude smaller ion flux. Thus, we could demonstrate that nanohole pattern formation is independent of ion flux over several orders of magnitude and scanning of a focused ion beam under appropriate conditions is identical to broad ion beam irradiation. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4721662]

引用

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