Te incorporation in GaAs1-xSbx nanowires and p-i-n axial structure

被引：17

作者：

Ahmad, Estiak ^{[1
]}

Kasanaboina, P. K. ^{[2
]}

Karim, M. R. ^{[1
]}

Sharma, M. ^{[1
]}

Reynolds, C. L. ^{[3
]}

Liu, Y. ^{[3
]}

Iyer, S. ^{[1
,2
]}

机构：

[1] North Carolina A&T State Univ, Joint Sch Nanosci & Nanoengn, Greensboro, NC 27401 USA

[2] North Carolina A&T State Univ, Dept Elect & Comp Engn, Greensboro, NC 27411 USA

[3] North Carolina State Univ, Dept Mat Sci & Engn, Raleigh, NC 27695 USA

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2016年 / 31卷 / 12期

基金：

美国国家科学基金会;

关键词：

Te doping; pin junction; GaAsSb nanowire; SILICON NANOWIRES; SEMICONDUCTOR NANOWIRES; SHELL NANOWIRES; BUILDING-BLOCKS; GALLIUM NITRIDE; SOLAR-CELLS; GAAS; PERFORMANCE; GROWTH; PHOTODETECTORS;

D O I：

10.1088/0268-1242/31/12/125001

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on in situ Te-doping in GaAs1-xSbx nanowires (NWs) grown via self-assisted molecular beam epitaxy. Enhanced Te incorporation in the NW at higher Te cell temperature was attested by the broadening of the x-ray diffraction peak and the presence of a strong coupled-LO phonon mode in the Raman spectra. Te-doping was estimated from the shift in the coupled-LO phonon mode to be similar to 2.0. x. 10(18)/cm(3). The surfactant nature of the Te modulated the growth kinetics, which was manifested in an enhanced radial growth rate with improved photoluminescence (PL) characteristics at both room temperature (RT) and 4 K. No noticeable planar defects were observed as ascertained from the high-resolution transmission electron microscopy images and selected-area electron diffraction patterns. Finally, we demonstrate the experimental realization of a GaAs1-xSbx axial p-type/intrinsic/n-type (p-i-n) structure on a Si substrate with Te as the n-type dopant. The GaAs1-xSbx p-i-n NW structures exhibited rectifying current-voltage (I-V) behavior. The dopant concentration and the transport parameters estimated from the PL spectra and I-V curve were found to be in good agreement.

引用

页数：8

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