Geometric Programming: Chaperoning the Optimization of Symmetric FinFET Circuits

In this discourse, estimation of optimum device doping concentration of symmetric-gate FinFET is carried out, which in turn, is subjected to two pellucid circuit instances for optimization using geometric programming. Initially, some of the technology specific device attributes concerning the current-voltage (I-V) characteristics are formulated as the objective and constraint functions of a geometric program to augment the optimum doping concentration. Some of the optimum parameters are thereby used in different circuit topologies to estimate their optimal behavior with least human oversight. Prompt prediction of globally optimum design solution, being the foremost trait of geometric programming, is recapitulated in this context of the relatively underexplored realm of FinFET devices.