Anisotropic damping of longitudinal optical phonon-plasmon coupling modes of InN films

被引:12
作者
Ishitani, Yoshihiro [1 ]
Fujiwara, Masayuki [1 ]
Wang, Xinqiang [1 ]
Che, Song-Bek [1 ]
Yoshikawa, Akihiko [1 ]
机构
[1] Chiba Univ, InN Project CREST Program, Venture Business Lab, Grad Sch Elect & Elect Engn,Inage Ku, Chiba 2638522, Japan
关键词
18;
D O I
10.1063/1.2951614
中图分类号
O59 [应用物理学];
学科分类号
摘要
The energy broadenings of the higher energy branch of the longitudinal optical (LO) phonon-plasmon coupling modes for E-1(LO) and A(1)(LO) are analyzed for InN films by infrared reflectance and spectroscopic ellipsometry. Larger broadening for the vibration parallel to c of A(1)(LO)-plasmon coupling is found with the decrease in electron density. This phenomenon is caused by the plasmon lifetime anisotropy, and is attributed to the reduction in crystal defects causing isotropic carrier scattering and the remaining of defects along the c axis such as threading dislocations and columnar grain boundaries. (C) 2008 American Institute of Physics.
引用
收藏
页数:3
相关论文
共 18 条
[1]  
AZZAM RMA, 1977, ELLIPSOMETRY POLARIZ, pCH2
[2]   INFRARED LATTICE VIBRATIONS AND DIELECTRIC DISPERSION IN CORUNDUM [J].
BARKER, AS .
PHYSICAL REVIEW, 1963, 132 (04) :1474-+
[3]   Determination of the electron effective mass of wurtzite InN by coherent upper-branch A1(LO) phonon-plasmon coupling mode [J].
Chang, Y-M. ;
Chu, H. W. ;
Shen, C-H. ;
Chen, H-Y. ;
Gwo, S. .
APPLIED PHYSICS LETTERS, 2007, 90 (07)
[4]   Infrared ellipsometry and Raman studies of hexagonal InN films: correlation between strain and vibrational properties [J].
Darakchieva, V ;
Paskov, PP ;
Valcheva, E ;
Paskova, T ;
Schubert, M ;
Bundesmann, C ;
Lu, H ;
Schaff, WJ ;
Monemar, B .
SUPERLATTICES AND MICROSTRUCTURES, 2004, 36 (4-6) :573-580
[5]   Raman scattering by the longitudinal optical phonon in InN: Wave-vector nonconserving mechanisms [J].
Demangeot, F ;
Pinquier, C ;
Frandon, J ;
Gaio, M ;
Briot, O ;
Maleyre, B ;
Ruffenach, S ;
Gil, B .
PHYSICAL REVIEW B, 2005, 71 (10)
[6]   Anisotropy of the Γ-point effective mass and mobility in hexagonal InN [J].
Hofmann, T. ;
Chavdarov, T. ;
Darakchieva, V. ;
Lu, H. ;
Schaff, W. J. ;
Schubert, M. .
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 6, 2006, 3 (06) :1854-1857
[7]   Electron mobility in InN and III-N alloys [J].
Hsu, L. ;
Jones, R. E. ;
Li, S. X. ;
Yu, K. M. ;
Walukiewicz, W. .
JOURNAL OF APPLIED PHYSICS, 2007, 102 (07)
[8]   Broadening factors of E1(LO) phonon-plasmon coupled modes of hexagonal InN investigated by infrared reflectance measurements [J].
Ishitani, Yoshihiro ;
Ohira, Takashi ;
Wang, Xinqiang ;
Che, Son-Bek ;
Yoshikawa, Akihiko .
PHYSICAL REVIEW B, 2007, 76 (04)
[9]   Effect of electron distribution in InN films on infrared reflectance spectrum of longitudinal optical phonon-plasmon interaction region [J].
Ishitani, Yoshihiro ;
Wang, Xinqiang ;
Che, Song-Bek ;
Yoshikawa, Akihiko .
JOURNAL OF APPLIED PHYSICS, 2008, 103 (05)
[10]   Disorder-activated infrared modes and surface depletion layer in highly Si-doped hexagonal GaN [J].
Kasic, A ;
Schubert, M ;
Kuhn, B ;
Scholz, F ;
Einfeldt, S ;
Hommel, D .
JOURNAL OF APPLIED PHYSICS, 2001, 89 (07) :3720-3724