Highly efficient light emission from stacking faults intersecting nonpolar GaInN quantum wells

被引：28

作者：

Joenen, H. ^{[1
]}

Rossow, U. ^{[1
]}

Bremers, H. ^{[1
]}

Hoffmann, L. ^{[1
]}

Brendel, M. ^{[1
]}

Draeger, A. D. ^{[1
]}

Schwaiger, S. ^{[2
]}

Scholz, F. ^{[2
]}

Thalmair, J. ^{[3
]}

Zweck, J. ^{[3
]}

Hangleiter, A. ^{[1
]}

机构：

[1] Tech Univ Carolo Wilhelmina Braunschweig, Inst Appl Phys, D-38106 Braunschweig, Germany

[2] Univ Ulm, Inst Optoelect, D-89081 Ulm, Germany

[3] Univ Regensburg, Inst Expt & Appl Phys, D-93040 Regensburg, Germany

来源：

APPLIED PHYSICS LETTERS | 2011年 / 99卷 / 01期

关键词：

DEFORMATION POTENTIALS; GALLIUM NITRIDE; PLANE GAN; INN; SEMICONDUCTORS; LUMINESCENCE; LIFETIME; FIELDS;

D O I：

10.1063/1.3607301

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the optical properties of m-plane GaInN/GaN quantum wells (QWs). We found that the emission energy of GaInN QWs grown on m-plane SiC is significantly lower than on nonpolar bulk GaN, which we attribute to the high density of stacking faults. Temperature and power dependent photoluminescence reveals that the GaInN QWs on SiC have almost as large internal quantum efficiencies as on bulk GaN despite the much higher defect density. Our results indicate that quantum-wire-like features formed by stacking faults intersecting the quantum wells provide a highly efficient light emission completely dominating the optical properties of the structures. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3607301]

引用

页数：3

共 32 条

[1] Optical properties of GaN/AlGaN quantum wells grown on nonpolar substrates [J].

Badcock, T. J. ;

Dawson, P. ;

Kappers, M. J. ;

McAleese, C. ;

Hollander, J. L. ;

Johnston, C. F. ;

Rao, D. V. Sridhara ;

Sanchez, A. M. ;

Humphreys, C. J. .

APPLIED PHYSICS LETTERS, 2008, 93 (10)

[2] Structural defects and luminescence features in heteroepitaxial GaN grown on on-axis and misoriented substrates [J].

Bai, J ;

Dudley, M ;

Chen, L ;

Skromme, BJ ;

Wagner, B ;

Davis, RF ;

Chowdhury, U ;

Dupuis, RD .

JOURNAL OF APPLIED PHYSICS, 2005, 97 (11)

[3] X-ray composition analysis of nonpolar GaInN/GaN multiple quantum well structures [J].

Bremers, H. ;

Schwiegel, A. ;

Hoffmann, L. ;

Joenen, H. ;

Rossow, U. ;

Thalmair, J. ;

Zweck, J. ;

Hangleiter, A. .

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2011, 248 (03) :616-621

[4] Exciton recombination dynamics in a-plane (Al,Ga)N/GaN quantum wells probed by picosecond photo and cathodoluminescence [J].

Corfdir, P. ;

Lefebvre, P. ;

Balet, L. ;

Sonderegger, S. ;

Dussaigne, A. ;

Zhu, T. ;

Martin, D. ;

Ganiere, J. -D. ;

Grandjean, N. ;

Deveaud-Pledran, B. .

JOURNAL OF APPLIED PHYSICS, 2010, 107 (04)

[5] Structural characterization of nonpolar (11(2)over-bar0) a-plane GaN thin films grown on (1(1)over-bar02) r-plane sapphire [J].

Craven, MD ;

Lim, SH ;

Wu, F ;

Speck, JS ;

DenBaars, SP .

APPLIED PHYSICS LETTERS, 2002, 81 (03) :469-471

[6] Calculations for the band lineup of strained InxGa1-xN/GaN quantum wells: Effects of strain on the band offsets [J].

Das, Tapas ;

Kabi, Sanjib ;

Biswas, Dipankar .

JOURNAL OF APPLIED PHYSICS, 2009, 105 (04)

[7] InN excitonic deformation potentials determined experimentally [J].

Gil, B. ;

Moret, M. ;

Briot, O. ;

Ruffenach, S. ;

Giesen, Ch. ;

Heuken, M. ;

Rushworth, S. ;

Leese, T. ;

Succi, M. .

JOURNAL OF CRYSTAL GROWTH, 2009, 311 (10) :2798-2801

[8] Suppression of nonradiative recombination by V-shaped pits in GaInN/GaN quantum wells produces a large increase in the light emission efficiency [J].

Hangleiter, A ;

Hitzel, F ;

Netzel, C ;

Fuhrmann, D ;

Rossow, U ;

Ade, G ;

Hinze, P .

PHYSICAL REVIEW LETTERS, 2005, 95 (12)

[9] Towards understanding the emission efficiency of nitride quantum wells [J].

Hangleiter, A ;

Fuhrmann, D ;

Grewe, M ;

Hitzel, F ;

Klewer, G ;

Lahmann, S ;

Netzel, C ;

Riedel, N ;

Rossow, U .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2004, 201 (12) :2808-2813

[10]

Hellman ES, 1997, MRS INTERNET J N S R, V2, pU32

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