A D-Band Power Amplifier with 15 dBm Psat in 0.13 μm SiGe BiCMOS Technology

被引：5
|
作者：
Aksoyak, Ibrahim Kagan [1 ]
Mock, Matthias [1 ]
Kaynak, Mehmet [2 ]
Ulusoy, Ahmet Cagri [1 ]
机构：
[1] Karlsruhe Inst Technol, Inst Radio Frequency Engn & Elect IHE, Karlsruhe, Germany
[2] IHP Microelect, Frankfurt, Oder, Germany
来源：
2022 IEEE 22ND TOPICAL MEETING ON SILICON MONOLITHIC INTEGRATED CIRCUITS IN RF SYSTEMS (SIRF) | 2022年
关键词：
power amplifier (PA); SiGe; millimeter wave (mm-wave); efficiency; D band; 140; GHz; OUTPUT POWER;
D O I：
10.1109/SiRF53094.2022.9720048
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper presents a two-stage D-band power amplifier (PA) realized in 0.13 mu m silicon-germanium (SiGe) BiCMOS technology. The amplifier employs the cascode topology at both stages and achieves a saturated output power (P-sat) of 15 dBm while output referred 1-dB compression point (OP1dB) is 11 dBm. The maximum power-added-efficiency (PAE(max)) is 7.8% and the small signal gain peaks at 18.2 dB. The presented amplifier occupies an area of 0.83 x 0.52 mm(2) including the pads.
引用
收藏
页码：5 / 8
页数：4
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