Reflectance-difference spectroscopy as an optical probe for in situ determination of doping levels in GaAs

被引：3

作者：

Lastras-Martinez, A. ^{[1
]}

Lara-Velazquez, I. ^{[1
]}

Balderas-Navarro, R. E. ^{[1
]}

Ortega-Gallegos, J. ^{[1
]}

Guel-Sandoval, S. ^{[1
]}

Lastras-Martinez, L. F. ^{[1
]}

机构：

[1] Univ Autonoma San Luis Potosi, Inst Invest Comunicac Opt, San Luis Potosi 78000, Mexico

来源：

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 8 | 2008年

关键词：

D O I：

10.1002/pssc.200779115

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We report on in situ Reflectance Difference Spectroscopy measurements carried out on GaAs (001). Measurements were performed at temperatures of 580 degrees C and 430 degrees C, in both n and p-type doped films and for both (2x4) and c(4x4) reconstructions. Samples employed were grown by Molecular Beam Epitaxy with doping levels in the range from 10(16)-10(19) cm(-3). We demonstrate the potential of Reflectance Difference Spectroscopy for impurity level determinations under growth conditions. (C) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：2565 / 2568

页数：4

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