Time Dependence of RF Losses in GaN-on-Si Substrates

被引：2

作者：

Cardinael, Pieter ^{[1
]}

Yadav, Sachin ^{[2
]}

Zhao, Ming ^{[2
]}

Rack, Martin ^{[1
]}

Lederer, Dimitri ^{[1
]}

Collaert, Nadine ^{[2
]}

Parvais, Bertrand ^{[3
]}

Raskin, Jean-Pierre ^{[1
]}

机构：

[1] Univ Catholique Leuven, Inst Informat & Commun Technol, Elect & Appl Math, B-1348 Leuven La Neuve, Belgium

[2] IMEC, B-3001 Leuven, Belgium

[3] Vrije Univ Brussel, Dept Elect & Informat, B-1050 Brussels, Belgium

来源：

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2022年 / 32卷 / 06期

关键词：

Substrates; Stress; Radio frequency; Silicon; Transient analysis; HEMTs; Conductivity; C-doped buffers; CPW lines; effective substrate resistivity; GaN-on-Si; RF losses; traps;

D O I：

10.1109/LMWC.2022.3162028

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

GaN-on-Si HEMT technology suffers from RF losses and non-linearities originating from the conductive Si substrate. The understanding and modeling of substrate performance are the keys to enabling next-generation front-end modules. In this letter, we show that when subjected to a chuck bias step, the effective substrate resistivity of a typical C-doped HEMT stack shows a dynamic behavior. Using a dedicated setup, stress/relaxation sequences at different temperatures are performed to understand this phenomenon. With the help of TCAD simulations, it is shown that redistribution of charges trapped in deep defects located in the III-N buffer can qualitatively explain the observed trends. Trap activation energies of 0.43 and 0.33 eV are extracted from measured data.

引用

页码：688 / 691

页数：4

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