Effects of post-deposition heat treatment on the microstructure and properties of Al-doped ZnO thin films prepared by aqueous phase deposition

被引:7
作者
Yao, Pin-Chuan [1 ]
Hang, Shih-Tse [2 ]
Wu, Menq-Jiun [2 ]
Hsiao, Wen-Tse [3 ]
机构
[1] Da Yeh Univ, Dept Mat Sci & Engn, Dacun 51591, Changhua, Taiwan
[2] Natl Changhua Univ Educ, Dept Mechatron Engn, Changhua 50007, Taiwan
[3] Natl Appl Res Labs, Instrument Technol Res Ctr, Hsinchu 30076, Taiwan
关键词
Liquid phase deposition; Thin films; Zinc oxides; Water; Hydrogen; Optical properties; CHEMICAL SOLUTION DEPOSITION; SOL-GEL PREPARATION; ZINC-OXIDE FILMS; OPTICAL-PROPERTIES; ELECTRICAL CHARACTERISTICS; NANOCRYSTALLINE ZNO; TRANSPARENT; ALUMINUM; TEMPERATURE; PHOTOLUMINESCENCE;
D O I
10.1016/j.tsf.2011.11.045
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In this study, transparent conducting aluminum-doped ZnO thin films (AZO) were deposited on glass substrates by a water-based liquid phase deposition method. The results show that by employing a two-step post-deposition heat treatment, the preferential orientation of ZnO (002) appeared as soon as the polycrystalline films were formed. Under a reducing atmosphere, the crystallinity of the films was effectively improved. Furthermore, the reducing atmosphere was also beneficial for the removal of the residual stress of the prepared films and the c-axis lattice constant was less stretched as compared to those under an inert atmosphere at identical T-p. Both the atomic force micrograph and scanning electron micrograph clearly exhibited that the heat treatment induced considerable grain growth. The X-ray photoelectron spectrum revealed that the heat treatment atmosphere had little impact on the bonding state of zinc and that the reducing atmosphere was favorable for the non-stoichiometric alumina, which in turn, resulted in more oxygen vacancies and led to improvement in electrical conductivity. The ratio of chemisorbed oxygen declined substantially when applying the reducing atmosphere. Accordingly, hydrogen was helpful for the reduction of chemisorbed oxygen onto AZO films. Generally, the electrical resistivity declined linearly with T,,. A minimum resistivity of 9.90x 10(-3) Omega.cm was obtained with a doping concentration of Al/Zn = 2.25 at.% at T-p = 700 degrees C. The largest mean free path of the carriers was 12 angstrom. which was much smaller than the observed grain sizes of the AZO films. Accordingly, the grain boundary scattering was not the detrimental scattering mechanism. In contrast, the scattering within the grains was responsible for the low mobility. An increase in optical transparency with the heat treatment temperature was observed due to the compact and smooth topography with larger grains, among which, less porous structures were formed at elevated temperature. (C) 2011 Elsevier B.V. All rights reserved.
引用
收藏
页码:2846 / 2854
页数:9
相关论文
共 51 条
[1]   ELASTIC MODULI OF SINGLE-CRYSTAL ZINC OXIDE [J].
BATEMAN, TB .
JOURNAL OF APPLIED PHYSICS, 1962, 33 (11) :3309-&
[2]   Transparent nanocrystalline ZnO films prepared by spin coating [J].
Berber, M ;
Bulto, V ;
Kliss, R ;
Hahn, H .
SCRIPTA MATERIALIA, 2005, 53 (05) :547-551
[3]   Effects of aluminum and indium incorporation on the structural and optical properties of ZnO thin films synthesized by spray pyrolysis technique [J].
Chakraborty, A. ;
Mondal, T. ;
Bera, S. K. ;
Sen, S. K. ;
Ghosh, R. ;
Paul, G. K. .
MATERIALS CHEMISTRY AND PHYSICS, 2008, 112 (01) :162-166
[4]   Structural, electrical, and optical properties of transparent conductive oxide ZnO:Al films prepared by dc magnetron reactive sputtering [J].
Chen, M ;
Pei, ZL ;
Wang, X ;
Sung, C ;
Wen, LS .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2001, 19 (03) :963-970
[5]   Photoluminescence and ultraviolet lasing of polycrystalline ZnO thin films prepared by the oxidation of the metallic Zn [J].
Cho, SL ;
Ma, J ;
Kim, YK ;
Sun, Y ;
Wong, GKL ;
Ketterson, JB .
APPLIED PHYSICS LETTERS, 1999, 75 (18) :2761-2763
[6]  
Fay S., 2007, TRANSPARENT CONDUCTI, P257
[7]   Influence of postdeposition annealing on the structural and optical properties of sputtered zinc oxide film [J].
Gupta, V ;
Mansingh, A .
JOURNAL OF APPLIED PHYSICS, 1996, 80 (02) :1063-1073
[8]   Effect of thermal treatment in oxygen, nitrogen, and air atmospheres on the electrical transport properties of zinc oxide thin films [J].
Hamad, O ;
Braunstein, G ;
Patil, H ;
Dhere, N .
THIN SOLID FILMS, 2005, 489 (1-2) :303-309
[9]   From ZnO colloids to nanocrystalline highly conductive films [J].
Hilgendorff, M ;
Spanhel, L ;
Rothenhausler, C ;
Muller, G .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1998, 145 (10) :3632-3637
[10]   THE EFFECTS OF ZINC DIFFUSION ON THE ELECTRICAL AND OPTICAL-PROPERTIES OF ZNO-AL FILMS PREPARED BY RF REACTIVE SPUTTERING [J].
IGASAKI, Y ;
SAITO, H .
THIN SOLID FILMS, 1991, 199 (02) :223-230