Current and temperature dependences of electroluminescence of InGaN-based UV/blue/green light-emitting diodes

被引：190

作者：

Mukai, T ^{[1
]}

Yamada, M ^{[1
]}

Nakamura, S ^{[1
]}

机构：

[1] Nichia Chem Ind Ltd, Dept Res & Dev, Tokushima 7748601, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1998年 / 37卷 / 11B期

关键词：

InGaN; blue LED; QCSE; localization; UV; SQW;

D O I：

10.1143/JJAP.37.L1358

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Current and temperature dependences of the electroluminescence of InGaN UV/blue/green single-quantum-well (SQW)structure light-emitting diodes (LEDs) were studied, The emission mechanism of InGaN SQW-structure LEDs with emission peak wavelengths longer than 375 nm is dominated by carrier recombination at large localized energy states caused by In composition fluctuation in the InGaN well layer. When the emission peak wavelength becomes shorter than 375 nm, the conventional band-to-band emission mechanism becomes dominant due to poor carrier localization resulting from small In composition fluctuations. In addition, the quantum-confined Stark effect due to the piezoelectric field becomes dominant, which causes a low output power of the UV LEDs.

引用

页码：L1358 / L1361

页数：4

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