The Role of Piezoeffect in Anomalous Dependence of the Conductivity of AlGaAs/GaAs Heterostructure with a Two-Dimensional Electron Gas on the Distance between Contacts

被引：0
作者：
Sizov, V. E. [1 ]
Stepushkin, M. V. [1 ]
机构：
[1] Russian Acad Sci, Inst Radio Engn & Elect, Fryazino Branch, Fryazino 141190, Moscow Oblast, Russia
来源：
TECHNICAL PHYSICS LETTERS | 2020年 / 46卷 / 01期
关键词：
two-dimensional electron gas; channel conductivity; piezoelectric effect; crystallographic direction; AlGaAs/GaAs; OHMIC CONTACTS; RESISTANCE; MODEL;
D O I：
10.1134/S1063785020010290
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The electric conductivity of the AlGaAs/GaAs heterostructure with two-dimensional electron gas has been experimentally studied in a temperature range of 10-300 K. At low temperatures, electric resistance of the structure exhibited growth when the distance between contacts decreased from 100 to 20 mu m. For explaining this anomalous behavior, numerical simulation of the influence of piezoeffect in the semiconductor on the channel conductivity was carried out, which showed that it is necessary to take into account the crystallographic orientation of the channel and the influence of remote piezoelectric charges on its potential.
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页码：69 / 72
页数：4
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