Computer simulation of ion-assisted thin film deposition

Ion assistance has been very successful in modern processes of physical or chemical vapour deposition, as it promotes the production of high-quality films and, in particular, the formation of new thin film materials with extreme properties [1-5]. In contrast to a broad range of experimental experience, the basic understanding of the effects of ion bombardment during thin film deposition is still in the state of a beginning. Therefore, the field is still mostly relying on broad empirical investigations rather than focused studies of optimization, which would be based on the basic understanding of the underlying mechanisms. Such studies require both well-directed experiments and a reliable modelling. The slow progress in this area is related to the large degree of complexity associated with the interplay of surface mechanisms, and both energetic and thermal processes in the near-surface bulk, which may be of physical and chemical nature. Consequently, the ability of analytical models is rather limited. Therefore, ion-assisted thin film deposition is a promising area of computer simulation. Different processes of ion-assisted deposition deliver different characteristic ion energies, ranging from approx. 10 eV in plasma-enhanced chemical vapour deposition (PECVD) to approx. 10 keV in, e.g., ion beam assisted deposition (IBAD). Consequently, specific methods of computer simulation are to be selected for a specific process.