Pulse-plating electrodeposition and annealing treatment of CuInSe2 films

被引：13

作者：

Liu Fang-yang ^{[1
]}

Lue Ying ^{[1
]}

Zhang Zhi-an ^{[1
]}

Lai Yan-qing ^{[1
]}

Li Jie ^{[1
]}

Liu Ye-xiang ^{[1
]}

机构：

[1] Cent S Univ, Sch Met Sci & Engn, Changsha 410083, Hunan, Peoples R China

来源：

TRANSACTIONS OF NONFERROUS METALS SOCIETY OF CHINA | 2008年 / 18卷 / 04期

关键词：

CuInSe2; thin films; pulse-plating electrodeposition; annealing; solar cells;

D O I：

10.1016/S1003-6326(08)60153-3

中图分类号：

TF [冶金工业];

学科分类号：

0806 ;

摘要：

CuInSe2 (CIS) thin film was prepared on molybdenum substrate using pulse-plating electrodeposition in aqueous solution. The most suitable pulse potential range for co-deposition is found to be from -0.55 to -0-75 V (vs SCE) from linear potential scanning curve. The electrodeposited films were characterized by X-ray diffractometry (XRD), scanning electron microscopy(SEM) and energy dispersive X-ray analysis (EDS). The annealing effects on electrodeposited precursors were investigated. And the influence of pulse parameters on film quality was studied. The chalcopyrite phase CuInSe2 films with smooth surface and stoichiometric composition are obtained at a pulse potential from -0.65 to -0.7 V (vs SCE), a pulse period of 1-9 ms with a duty cycle of 33% and annealing treatment.

引用

页码：884 / 889

页数：6

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