Probing the electron-phonon coupling in MgB2 through magnetoresistance measurements in neutron irradiated thin films

被引:12
作者
Monni, M. [1 ,2 ,3 ,4 ]
Pallecchi, I. [3 ,4 ]
Ferdeghini, C. [3 ,4 ]
Ferrando, V. [3 ,4 ]
Floris, A. [5 ]
D'Agliano, E. Galleani [3 ,4 ]
Lehmann, E. [6 ]
Sheikin, I. [7 ]
Tarantini, C. [3 ,4 ]
Xi, X. X. [8 ]
Massidda, S. [1 ,2 ]
Putti, M. [3 ,4 ]
机构
[1] Univ Cagliari, SLACS, INFM, CNR, I-09124 Monserrato, Italy
[2] Univ Cagliari, Dipartimento Fis, I-09124 Monserrato, Italy
[3] Univ Genoa, LAMIA, INFM, CNR, I-16146 Genoa, Italy
[4] Univ Genoa, Dipartimento Fis, I-16146 Genoa, Italy
[5] Free Univ Berlin, Inst Theoret Phys, D-14195 Berlin, Germany
[6] Paul Scherrer Inst, CH-5232 Villigen, Switzerland
[7] CNRS, MPI FKF, GHMFL, F-38042 Grenoble 9, France
[8] Penn State Univ, University Pk, PA 16802 USA
基金
美国国家科学基金会; 英国科研创新办公室;
关键词
D O I
10.1209/0295-5075/81/67006
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We report magnetoresistance ( MR) measurements on MgB2 and the corresponding full account from ab initio calculations; we suggest that this combination can be a useful tool to probe electron-phonon coupling. We obtain good quantitative agreement between high-field measurements on neutron-irradiated epitaxial thin films and calculations within Bloch-Boltzmann transport theory over a wide range of magnetic fields (0-28 T) and temperatures (40-300 K), and as a function of the field orientation. The crossovers between in-plane and out-of-plane MR, experimentally observed as a function of either disorder or temperature are well reproduced indicating that disorder and interaction with phonons strongly affect the scattering rate of sigma-carriers. Copyright (c) EPLA, 2008.
引用
收藏
页数:6
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