RF MEMS switches supported by polymeric structures

被引：2
|
作者：
Lucibello, A. [1 ]
Proietti, E. [1 ]
Catoni, S. [1 ]
Frenguelli, L. [1 ]
Marcelli, R. [1 ]
Bartolucci, G. [2 ]
机构：
[1] CNR, IMM Roma, Via Fosso Cavaliere 100, I-00133 Rome, Italy
[2] Univ Roma Tor Vergata, I-00133 Rome, Italy
来源：
CAS 2007 INTERNATIONAL SEMICONDUCTOR CONFERENCE, VOLS 1 AND 2, PROCEEDINGS | 2007年
关键词：
RF MEMS; switches; SU-8;
D O I：
10.1109/SMICND.2007.4519696
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
RF MEMS shunt switches in coplanar waveguide (CPW) configuration have been designed, realized and tested for wideband isolation purposes. SU-8 negative photo-resist technology has been introduced for improving the bridge mechanics and the RF performances of the device. The polymeric material is used to elevate the ground planes of the CPW structure, with minor consequences on the electrical matching and an improvement in the bridge ends definition. The EM design has been followed by a sixstep photolithographic process on a 4 '' oxidized high resistivity silicon wafer, up to the release of the bridge by using a plasma etching technique.
引用
收藏
页码：259 / +
页数：2
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