Improvement of Light Extraction Efficiency and Reduction of Leakage Current in GaN-Based LED via V-Pit Formation

被引：31

作者：

Koike, Kayo ^{[1
]}

Lee, Seogwoo ^{[1
]}

Cho, Sung Ryong ^{[1
]}

Park, Jinsub ^{[2
]}

Lee, Hyojong ^{[3
]}

Ha, Jun-Seok ^{[4
]}

Hong, Soon-Ku ^{[5
]}

Lee, Hyun-Yong ^{[4
]}

Cho, Meoung-Whan ^{[1
]}

Yao, Takafumi ^{[6
]}

机构：

[1] Wavesquare, Yongin 449863, South Korea

[2] Hanyang Univ, Dept Elect Engn, Seoul 133791, South Korea

[3] Dong A Univ, Dept Mat Sci & Engn, Pusan 604714, South Korea

[4] Chonnam Natl Univ, Fac Appl Chem Engn, Kwangju 500757, South Korea

[5] Chungnam Natl Univ, Dept Mat Sci & Engn, Taejon 305764, South Korea

[6] Tohoku Univ, Interdisciplinary Res Ctr, Sendai, Miyagi 9800077, Japan

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2012年 / 24卷 / 06期

关键词：

Gallium nitride; light-emitting diodes; surface texture; V-shaped-pit formation; EMITTING DIODE; OUTPUT POWER; PERFORMANCE;

D O I：

10.1109/LPT.2011.2180523

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Four types of GaN-based light-emitting diodes (LEDs) with V-pits formed in different regions were grown by metal-organic chemical vapor deposition. The position of the V-pits embedded in the layers of the LED structures was controlled by varying the growth temperature. We achieved the highest output power and lowest leakage current values with the LED structures comprising V-pits embedded in active regions and the p-GaN textured surface. The V-pit formation enhances the light output power and reverse voltage values by 1.3 times the values of the conventional LED owing to the enhancement of the light scattering probability and the effective filtering of threading dislocations.

引用

收藏

页码：449 / 451

页数：3

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