Resonant Tunneling Diodes High-Speed Terahertz Wireless Communications-A Review

被引:55
作者
Cimbri, Davide [1 ]
Wang, Jue [1 ]
Al-Khalidi, Abdullah [1 ]
Wasige, Edward [1 ]
机构
[1] Univ Glasgow, James Watt Sch Engn, Div Elect & Nanoscale Engn, High Frequency Elect Grp, Glasgow G12 8LT, Lanark, Scotland
基金
英国工程与自然科学研究理事会; 欧盟地平线“2020”;
关键词
Wireless communication; III-V semiconductor materials; Oscillators; Semiconductor diodes; Indium phosphide; Resonant tunneling devices; Gallium arsenide; Electronic oscillator; resonant tunneling diode (RTD); terahertz (THz); terahertz monolithic integrated circuit (TMIC); wireless communications; DATA-TRANSMISSION; STATE LIFETIME; SUB-TERAHERTZ; THZ; POWER; FREQUENCY; GHZ; OSCILLATOR; PHYSICS; RANGE;
D O I
10.1109/TTHZ.2022.3142965
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Resonant tunneling diode (RTD) technology is emerging as one of the promising semiconductor-based solid-state technologies for terahertz (THz) wireless communications. This article provides a review of the state of the art, with a focus on the THz RTD oscillator, which is the key component of RTD-based THz transmitters and coherent receivers. A brief summary on the device principle of operation, technology, modeling, as well as an overview of oscillator design and implementation approaches for THz emitters, is provided. A new insight to device evaluation and to the reported oscillator performance levels is also given, together with brief remarks on RTD-based THz detectors. Thereafter, an overview of the reported wireless links which utilize an RTD in either transmission or reception, or in both roles, is given. Highlight results include the record single-channel wireless data rate of 56 Gb/s employing an all RTD-based transceiver, which demonstrates the potential of the technology for future short-range communications. The article concludes with a discussion of the current technical challenges and possible strategies for future progress.
引用
收藏
页码:226 / 244
页数:19
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