Ion implantation in diamond using 30 keV Ga+ focused ion beam

Focused ion beam (FIB) technique is a well established technique for processing and modifying materials at micro- and nanoscale. FIB implantation with 30 key Ga+ ions into a single crystal diamond has been studied via a combination of transmission electron microscopy (TEM) imaging and spectroscopy in the attempt to understand the damage formation in diamond. The damage formation has been studied as a function of implantation dose with eight different doses ranging from 6 x 10(14) to 1 x 10(16) ions/cm(2). The TEM studies have revealed different structure of low-dose and high-dose implanted regions. 3.5 nm diamond cap layer was observed in the low-dose implanted layer. TEM analysis has shown volume extension of around 50% in the amorphous region and up to 7% in diamond at the crystal-amorphous interface. The density of amorphous damage layer was measured to be 2.51 g/cm(3) and 2.24 g/cm(3) in the low-dose and high-dose implanted regions, respectively. The amorphisation threshold for ion implantation in diamond at room temperature was determined to be 5.2 x 10(22) vacancies/cm(3). (C) 2011 Elsevier B.V. All rights reserved.