Electrical characteristics of HfO2/La2O3/HfO2 films deposited by ECR-ALD

被引：0
|
作者：
Kim, Woong-Sun [1 ]
Kang, Byung-Woo [1 ]
Park, Jong-Wan [1 ]
机构：
[1] Hanyang Univ, Thin Film Lab, Dept Mat Sci & Engn, Seoul 133791, South Korea
来源：
JOURNAL OF CERAMIC PROCESSING RESEARCH | 2010年 / 11卷 / 05期
关键词：
hafnium oxide; lanthanum oxide; capacitor; high-k oxide; ATOMIC LAYER DEPOSITION; THIN; CAPACITORS; MECHANISM; OXIDES;
D O I：
暂无
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
In this study, we investigated the electrical characteristics of HfO2/La2O3/HfO2 capacitor (HLH capacitor) films. Lanthanum oxide (La2O3) and hafnium oxide (HfO2) films were deposited by an electron cyclotron resonance plasma-enhanced atomic layer deposition method (ECR-ALD). Tris(isopropyl-cyclopentadienyl)lanthanum (La(iPrCp)(3)) and tetrakis(ethylmethylamino) hafnium (TEMAHf) were utilized as the lanthanum and hafnium precursors, respectively. The leakage current of the HLH capacitor with 2/10/2 nm layers was about 2.20 x 10(-10) A/cm(2) at 1 MV/cm and the dielectric constant of the film was 20.2. Based on leakage current mechanism research, the dominant conduction mechanism of the HLH capacitor is Poole-Frenkel (P-F) and space-charge-limited current (SCLC) conduction.
引用
收藏
页码：598 / 601
页数：4
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