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Roughening transition of Si(hhm) surface with m/h=1.4-1.5 studied by UHV-REM
被引:0
|
作者
:
论文数:
引用数:
h-index:
机构:
Suzuki, T
[
1
]
Yagi, K
论文数:
0
引用数:
0
h-index:
0
机构:
TOKYO INST TECHNOL,DEPT PHYS,TOKYO 152,JAPAN
TOKYO INST TECHNOL,DEPT PHYS,TOKYO 152,JAPAN
Yagi, K
[
1
]
机构
:
[1]
TOKYO INST TECHNOL,DEPT PHYS,TOKYO 152,JAPAN
来源
:
SURFACES, VACUUM, AND THEIR APPLICATIONS
|
1996年
/ 378期
关键词
:
D O I
:
暂无
中图分类号
:
O64 [物理化学(理论化学)、化学物理学];
O56 [分子物理学、原子物理学];
学科分类号
:
070203 ;
070304 ;
081704 ;
1406 ;
摘要
:
引用
收藏
页码:1 / 7
页数:7
相关论文
共 14 条
[1]
STM studies of Si(hhm) surfaces with m/h=1.4-1.5
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SURFACE SCIENCE,
1996,
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[2]
STM studies of Si(hhm) surfaces with m/h = 1.4-1.5
Tokyo Inst of Technology, Tokyo, Japan
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Surf Sci,
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[3]
STRUCTURE OF HIGH-INDEX CLEAN SI SURFACE STUDIED BY REM (HHM) SURFACE WITH M/H=1.4 TO 1.5
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PHYSICA STATUS SOLIDI A-APPLIED RESEARCH,
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SURFACE ELECTROMIGRATION OF METALS ON SI SURFACES STUDIED BY UHV-REM
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[5]
Gold-induced faceting on an Si(hhm) surface (m/h=1.4-1.5) studied by spot profile analyzing low-energy electron diffraction
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[6]
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[7]
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[8]
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[9]
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[10]
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SURFACE SCIENCE,
1993,
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