Anomalous temperature dependence of the carrier capture time into InAs/GaAs quantum dots grown on a quantum wire array

被引：1

作者：

Sreenivasan, D. ^{[1
]}

Haverkort, J. E. M. ^{[1
]}

Ipek, O. ^{[1
]}

Martinez-Vazquez, B. ^{[1
]}

Eijkemans, T. J. ^{[1
]}

Mano, T. ^{[1
]}

Notzel, R. ^{[1
]}

机构：

[1] Eindhoven Univ Technol, Dept Phys, NL-5600 MB Eindhoven, Netherlands

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2008年 / 40卷 / 06期

关键词：

quantum wires; quantum dots; carrier capture;

D O I：

10.1016/j.physe.2007.08.094

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Carrier capture into quantum dots (QDs) grown on top of a 16 period quantum wire (QWR)-superlattice is studied as a function of temperature. Time-resolved differential reflectivity reveals an anomalous increase of the capture time between 40 and 100K. Photoluminescence data indicate carrier re-emission out of the QWRs into the QDs, in this temperature range. The anomalous temperature dependence is interpreted as due to the temperature dependence of the effective carrier diffusion length in this structure. (c) 2007 Elsevier B.V. All rights reserved.

引用

页码：1879 / 1881

页数：3

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