Normally incident infrared absorption in vertically aligned InGaAs/GaAs quantum dot superlattice

被引：0

作者：

Zhuang, QD ^{[1
]}

Li, JM ^{[1
]}

Zeng, YP ^{[1
]}

Pan, L ^{[1
]}

Kong, MY ^{[1
]}

Lin, LY ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China

来源：

JOURNAL OF INFRARED AND MILLIMETER WAVES | 1998年 / 17卷 / 06期

关键词：

quantum dot; superlattice; infrared absorption;

D O I：

暂无

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

30-period InGaAs/GaAs quantum dot superlattice was fabricated by MBE. Using cross sectional transmission electron microscopy, the InGaAs quantum dots were found to be perfectly vertically aligned in the growth direction (100). Under normally incident radiation, a distinct absorption in the 8.5 similar to 10.4 mu m range peaked at 9.9 mu m was observed. The normally incident infrared absorption in vertically aligned quantum dot superlattice in the 8 similar to 12 mu m range was realized for the first time. This result indicates the potential application of the quantum dot superlattice structure without grating as normally incident infrared detector focal plane arrays.

引用

页码：477 / 480

页数：4

共 15 条

[1] INTRINSIC MECHANISM FOR THE POOR LUMINESCENCE PROPERTIES OF QUANTUM-BOX SYSTEMS [J].

BENISTY, H ;

SOTOMAYORTORRES, CM ;

WEISBUCH, C .

PHYSICAL REVIEW B, 1991, 44 (19) :10945-10948

[2] SPECTROSCOPY OF QUANTUM LEVELS IN CHARGE-TUNABLE INGAAS QUANTUM DOTS [J].

DREXLER, H ;

LEONARD, D ;

HANSEN, W ;

KOTTHAUS, JP ;

PETROFF, PM .

PHYSICAL REVIEW LETTERS, 1994, 73 (16) :2252-2255

[3]

Fafard S, 1996, APPL PHYS LETT, V68, P991, DOI 10.1063/1.116122

[4] INAS/GAAS PYRAMIDAL QUANTUM DOTS - STRAIN DISTRIBUTION, OPTICAL PHONONS, AND ELECTRONIC-STRUCTURE [J].

GRUNDMANN, M ;

STIER, O ;

BIMBERG, D .

PHYSICAL REVIEW B, 1995, 52 (16) :11969-11981

[5] NORMAL INCIDENT INGAAS/GAAS MULTIPLE-QUANTUM-WELL INFRARED DETECTOR USING ELECTRON INTERSUBBAND TRANSITIONS [J].

KARUNASIRI, G ;

PARK, JS ;

CHEN, J ;

SHIH, R ;

SCHEIHING, JF ;

DODD, MA .

APPLIED PHYSICS LETTERS, 1995, 67 (18) :2600-2602

[6] DIRECT FORMATION OF QUANTUM-SIZED DOTS FROM UNIFORM COHERENT ISLANDS OF INGAAS ON GAAS-SURFACES [J].

LEONARD, D ;

KRISHNAMURTHY, M ;

REAVES, CM ;

DENBAARS, SP ;

PETROFF, PM .

APPLIED PHYSICS LETTERS, 1993, 63 (23) :3203-3205

[7]

Levine B. F., 1993, J APPL PHYS, V74

[8] Normal incident infrared absorption from InGaAs/GaAs quantum dot superlattice [J].

Pan, D ;

Zeng, YP ;

Kong, MY ;

Wu, J ;

Zhu, YQ ;

Zhang, CH ;

Li, JM ;

Wang, CY .

ELECTRONICS LETTERS, 1996, 32 (18) :1726-1727

[9] Photoluminescence and far-infrared absorption in Si-doped self-organized InAs quantum dots [J].

Phillips, J ;

Kamath, K ;

Zhou, X ;

Chervela, N ;

Bhattacharya, P .

APPLIED PHYSICS LETTERS, 1997, 71 (15) :2079-2081

[10] Intraband absorption in n-doped InAs/GaAs quantum dots [J].

Sauvage, S ;

Boucaud, P ;

Julien, FH ;

Gerard, JM ;

ThierryMieg, V .

APPLIED PHYSICS LETTERS, 1997, 71 (19) :2785-2787

← 1 2 →