SFERA: An Integrated Circuit for the Readout of X and γ-Ray Detectors

被引:39
作者
Schembari, Filippo [1 ,2 ]
Quaglia, Riccardo [1 ,3 ]
Bellotti, Giovanni [1 ,4 ]
Fiorini, Carlo [1 ,4 ]
机构
[1] Politecn Milan, Dipartimento Elettron Informaz & Bioingn, I-20133 Milan, Italy
[2] Univ Coll Dublin, Sch Elect & Elect Engn, Dublin 4, Ireland
[3] CSEM, CH-2002 Neuchatel, Switzerland
[4] Ist Nazl Fis Nucl, Sez Milano, I-20133 Milan, Italy
关键词
ASIC; gamma-ray detectors; high rate measurements; Silicon Drift Detectors; X-ray detectors; X-ray spectroscopy; CMOS PEAK DETECT; HOLD CIRCUITS; ADC; PREAMPLIFIERS; CONVERTER;
D O I
10.1109/TNS.2016.2565200
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this work we present SFERA, a low-noise fully-programmable 16 channel readout ASIC designed for both X- and gamma-ray spectroscopy and imaging applications. The chip is designed to process signals coming from solid-state detectors and CMOS preamplifiers. The design has been guided by the use of Silicon Drift Detectors (SDDs) and CUBE charge sensitive amplifiers (CSAs), although we consider the ASIC sufficiently versatile to be used with other types of detectors. Five different gains are implemented, namely 2800 e(-), 4400 e(-), 10000 e(-), 14000 e(-) and 20000 e(-), considering the input connected to a 25 fF feedback capacitance CMOS preamplifier. Filter peaking times (tp) are also programmable among 0.5, 1, 2, 3, 4 and 6 mu s. Each readout channel is the cascade of a 9th order semi-Gaussian shaping-amplifier (SA) and a peak detector (PKS), followed by a dedicated pile-up rejection (PUR) digital logic. Three data multiplexing strategies are implemented: the so-called polling X, intended for high-rate X-ray applications, the polling y, for scintillation light detection and the sparse, for signals derandomization. The spectroscopic characterization has shown an energy resolution of 122.1 eV FWHM on the Mn-K-alpha line of an Fe-55 X-ray source using a 10 mm(2) SDD cooled at 35 degrees C at 4 mu s filter peaking time. The measured resolution is 130 eV at the peaking time of 500 ns. At 1 Mcps input count rate and 500 ns peaking time, we have measured 42% of processed events at the output of the ASIC after the PUR selection. Output data can be digitized on-chip by means of an embedded 12-bit successive-approximation ADC. The effective resolution of the data converter is 10.75-bit when operated at 4.5 MS/s. The chosen technology is the AMS 0.35 mu m CMOS and the chip area occupancy is 5 x 5 mm(2).
引用
收藏
页码:1797 / 1807
页数:11
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