Interface state density distribution in Au/n-ZnO nanorods Schottky diodes

被引：41

作者：

Faraz, S. M. ^{[1
]}

Willander, M. ^{[2
]}

Wahab, Q. ^{[1
]}

机构：

[1] Linkoping Univ, Dept Phys Chem Biol, SE-58183 Linkoping, Sweden

[2] Linkoping Univ, Campus Norkoping, Dept Sci & Technol, SE-58183 Linkoping, Sweden

来源：

E-MRS 2011 FALL SYMPOSIUM I: ADVANCES IN TRANSPARENT ELECTRONICS, FROM MATERIALS TO DEVICES III | 2012年 / 34卷

关键词：

Schottky contacts; Interface states; ZnO nanorods; SI;

D O I：

10.1088/1757-899X/34/1/012006

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Interface states density (NSS) distribution is extracted in Au/ZnO Schottky diodes. Nanorods of ZnO are grown on silver (Ag) using aqueous chemical growth (ACG) technique. Well aligned hexagonal-shaped vertical nanorods of a mean diameter of 300 - 450 nm and 1.3 - 1.9 mu m high are revealed in SEM. Gold (Au) Schottky contacts of thickness 60 nm and 1.5mm diameter were evaporated. For electrical characterization of Schottky diodes current-voltage (IV) and capacitance-Voltage (C-V) measurements are performed. The diodes exhibited a typical non-linear rectifying behavior with a barrier height of 0.62eV and ideality factor of 4.3. Possible reasons for low barrier height and high ideality factor have been addressed. Series resistance (R-S) has been calculated from forward I-V characteristics using Chueng's function. The density of interfacial states (N-SS) below the conduction band (E-C-E-SS) is extracted using I-V and C-V measured values. A decrease in interface states density (N-SS) is observed from 3.74 x 10(11) - 7.98 x 10(10) eV(-1) cm(-2) from 0.30eV - 0.61eV below the conduction band edge.

引用

页数：7

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