Effect of the oxygen flow on the properties of ITO thin films deposited by ion beam assisted deposition (IBAD)

被引：34
作者：
Meng, Li-Jian [1 ,2 ]
Gao, Jinsong [3 ]
Silva, R. A. [1 ]
Song, Shigeng [4 ]
机构：
[1] Inst Super Engn Porto, Dept Fis, P-4200072 Oporto, Portugal
[2] Univ Minho, Ctr Fis, P-4700 Braga, Portugal
[3] Chinese Acad Sci, Changchun Inst Opt Fine Mech & Phys, Ctr Opt Technol, Changchun 130033, Peoples R China
[4] Univ Paisley, Thin Film Ctr, Paisley PA1 2BE, Renfrew, Scotland
来源：
THIN SOLID FILMS | 2008年 / 516卷 / 16期
关键词：
ITO; thin Film; ion beam assisted deposition; IR reflectance; optical and electrical properties;
D O I：
10.1016/j.tsf.2007.07.071
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
ITO films were deposited onto glass substrates by ion beam assisted deposition method. The oxygen ions were produced using a Kaufman ion source. The oxygen flow was varied from 20 until 60 sccm and the effect of the oxygen flow on properties of ITO films has been studied. The structural properties of the film were characterized by X-ray diffraction and atomic force microscopy. The optical properties were characterized by optical transmission measurements and the optical constants (refractive index n and extinction coefficient k) and film thickness have been obtained by fitting the transmittance using a semi-quantum model. The electrical properties were characterized by Hall effect measurements. It has been found that the ITO film with low electrical resistivity and high transmittance can be obtained with 40 sccm oxygen flow (the working pressure is about 2.3 x 10(-2) Pa at this oxygen flow). (c) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码：5454 / 5459
页数：6
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