Influence of chlorine on etched sidewalls in chemically assisted ion beam etching with SU-8 as mask

被引：0
作者：
Pang, L [1 ]
Tsai, CH [1 ]
Fainman, Y [1 ]
机构：
[1] Univ Calif San Diego, Dept Elect & Comp Engn, La Jolla, CA 92093 USA
来源：
OPTICAL ENGINEERING | 2005年 / 44卷 / 06期
基金：
美国国家科学基金会;
关键词：
dry etching; sidewall; SU-8; holographic lithography; duty ratio;
D O I：
10.1117/1.1923007
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
A thin layer of SU-8 submicron pattern produced by holographic lithography is used as the dry etch mask in a chemically assisted ion beam etching (CAIBE) system. The effect of the chlorine gas flow rate on etched sidewalls is investigated; by matching the lateral etch rate and the deposition rate, etching selectivity of up to 7:1 is achieved, rendering smooth vertical sidewalls and damage-free upper portions for the etched structure. (c) 2005 Society of Photo-Optical Instrumentation Engineers.
引用
收藏
页码：1 / 4
页数：4
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