Imaging and Analysis by Transmission Electron Microscopy of the Spontaneous Formation of Al-Rich Shell Structure in AlxGa1-xN/GaN Nanowires

被引：19

作者：

Allah, Rabie Fath ^{[1
]}

Ben, Teresa ^{[1
]}

Songmuang, Rudeesun ^{[2
]}

Gonzalez, David ^{[1
]}

机构：

[1] Univ Cadiz, Dept Ciencia Mat & IM & QI, Cadiz, Spain

[2] CEA CNRS Grp Nanophys & Semicond, Inst Neel, F-38054 Grenoble 9, France

来源：

APPLIED PHYSICS EXPRESS | 2012年 / 5卷 / 04期

关键词：

MOLECULAR-BEAM EPITAXY; GROWTH;

D O I：

10.1143/APEX.5.045002

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Growth of catalyst-free AlxGa1-xN (0.15 < x < 0.50)/GaN nanowires by plasma-assisted molecular beam epitaxy is thoroughly structurally and chemically analyzed by using transmission electron microscopy techniques. We found that well-defined and defect-free core-shell structures are spontaneously formed during the AlxGa1-xN section growth. An Al-rich shell with a significantly higher Al composition pseudomorphically encapsulates a Ga-rich AlxGa1-xN core with an atomically abrupt heterointerface. Nevertheless, the energy dispersive X-ray spectroscopy reveals a complex chemical composition gradient along the wire axis for both core and shell blocks, which is ascribed to the adatom surface kinetic differences and the geometric shadow effect during the growth. (C) 2012 The Japan Society of Applied Physics

引用

页数：3

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