High quality ultra-thin TiO2/Si3N4 gate dielectric for giga scale MOS technology

被引：27

作者：

Guo, X ^{[1
]}

Ma, TP ^{[1
]}

Tamagawa, T ^{[1
]}

Halpern, BL ^{[1
]}

机构：

[1] Yale Univ, Dept Elect Engn, New Haven, CT 06520 USA

来源：

INTERNATIONAL ELECTRON DEVICES MEETING 1998 - TECHNICAL DIGEST | 1998年

关键词：

D O I：

10.1109/IEDM.1998.746378

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents the study of physical and electrical properties of ultra-thin (2.0-3.0 nm EOT) TiO2/Si3N4 stack gate dielectrics for future giga scale MOS technology. Both layers of the dielectric stack are deposited by the Jet Vapor Deposition (JVD) process. Our experimental data indicate that the leakage current in the TiO2/Si3N4 stack is substantially (several decades) lower than that in single oxide layer of the same equivalent oxide thickness (EOT). These films also exhibit excellent interface quality, dielectric reliability, and MOSFET transistor performance comparable to that of thermal oxide.

引用

页码：377 / 380

页数：4

共 5 条

[1]

Khare M, 1997, 1997 SYMPOSIUM ON VLSI TECHNOLOGY, P51, DOI 10.1109/VLSIT.1997.623690

[2] Leakage current and electrical breakdown in metal-organic chemical vapor deposited TiO2 dielectrics on silicon substrates [J].